IRFR3710ZPBF

$0.60

Description：MOSFET N-CH 100V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:b3857690430f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR3710ZPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR3710ZPBF

Description：MOSFET N-CH 100V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2930 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：140W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR3710ZPBF

IRFR3710ZPBF

Single FETs, MOSFETs Overview

The IRFR3710ZPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252) surface-mount package and utilizes advanced processing techniques to achieve an ultra-low on-resistance of 18 mΩ at VGS = 10V. The device supports a continuous drain current of 42A when package-limited at 25°C, with a maximum junction temperature rating of 175°C. Key electrical parameters include a 100V breakdown voltage, 69 nC typical total gate charge, and a maximum power dissipation of 140W.

Single FETs, MOSFETs Feature Summary

Advanced process technology enabling extremely low on-resistance per silicon area
Fast switching characteristics for efficient power control
Repetitive avalanche capability allowed up to the maximum junction temperature
Lead-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

High-efficiency synchronous rectification circuits
DC-DC converter topologies requiring fast switching
Power management systems operating within industrial temperature ranges

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the correct packaging format, such as tape and reel quantities. Confirm that the component meets the required qualification level for the intended application environment. Ensure compliance with moisture sensitivity levels during storage and handling procedures before assembly.

Single FETs, MOSFETs Selection Notes

Select this component based on the requirement for low conduction losses in high-current applications. Evaluate the thermal resistance values to ensure adequate heat sinking for the expected power dissipation. Consider the gate charge requirements relative to the driving circuit capabilities to optimize switching performance and minimize switching losses.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed for general-purpose power switching applications where efficiency and reliability are critical. The D-Pak package provides a balance between thermal performance and compact footprint suitable for surface-mount PCB layouts.