Memory IC IS42S16800E-75ETL-TR product image

IS42S16800E-75ETL-TR

  • Description:IC DRAM 128MBIT PAR 54TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)

SKU:ebe2e41ebef0 Category: Brand:

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IS42S16800E-75ETL-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 128MBIT PAR 54TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S16800E-75ETL-TR

  • Description:IC DRAM 128MBIT PAR 54TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:128Mbit
  • Memory Organization:8M x 16
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:54-TSOP II
  • Access Time:5.4 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS42S16800E-75ETL-TR

IS42S16800E-75ETL-TR

Memory IC Overview

The IS42S16800E-75ETL-TR is a 128Mb Synchronous DRAM manufactured by ISSI. It features an 8M x 16 organization with a 54-pin TSOP II package. The device operates at a maximum clock frequency of 133 MHz and supports CAS latencies of 2 or 3 clocks. Access times are specified as 5.4 ns for CL=3 and 5.4 ns for CL=2. It utilizes a 3.3V power supply, LVTTL interface, and includes auto/self-refresh capabilities.

Memory IC Feature Summary

  • Fully synchronous operation with all signals referenced to the positive clock edge
  • Internal bank architecture allows hiding row access and precharge cycles
  • Supports programmable burst lengths including sequential and interleave sequences
  • Includes dedicated power-saving modes such as power-down and self-refresh

Memory IC Applications

  • High-speed data transfer systems using pipeline architecture
  • Mobile synchronous DRAM applications requiring low power consumption
  • Industrial temperature availability environments
  • Systems utilizing LVTTL compatible interfaces

Memory IC Procurement Notes

Verify that the ordering suffix ETL corresponds specifically to the TSOP II package type and tape-and-reel delivery format. Confirm the -75E speed grade matches the required 133 MHz operational frequency. Ensure the component meets industrial temperature range specifications if deployed in harsh environments. Cross-reference the datasheet revision to confirm current electrical characteristics.

Memory IC Selection Notes

Select this component when a 128Mb density with an 8M x 16 configuration is required. Choose the TSOP II package for surface-mount applications where specific pinout compatibility is necessary. Consider the 133 MHz speed grade for systems operating within these timing constraints. Verify voltage requirements align with standard 3.3V memory systems.

Memory IC Part Context

This part belongs to the IS42S16800E series of 128Mb Synchronous DRAMs from Integrated Silicon Solution. The series offers various speed grades and packaging options, including BGA and TSOP II. The device is designed for high-speed data transfer using a pipeline architecture and supports multiple burst lengths and sequences for flexible system integration.

Memory IC Replacement Considerations

IS42S16800E-7BLI: Offers identical 128Mb capacity but operates at a lower 143 MHz frequency with a 5.4 ns access time. Available in TFBGA-54 packaging instead of TSOP II. Requires verification of physical footprint compatibility on the PCB.

IS42S16800E-75ETL-TRIS42S16800E-75ETL-TR

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