Memory IC IS43TR81280B-125KBLI-TR product image

IS43TR81280B-125KBLI-TR

  • Description:IC DRAM 1GBIT PAR 78TWBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)

SKU:f5e3c9973bc8 Category: Brand:

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IS43TR81280B-125KBLI-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 1GBIT PAR 78TWBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS43TR81280B-125KBLI-TR

  • Description:IC DRAM 1GBIT PAR 78TWBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - DDR3
  • Memory Size:1Gbit
  • Memory Organization:128M x 8
  • Memory Interface:Parallel
  • Clock Frequency:800 MHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.425V ~ 1.575V
  • Operating Temperature:-40°C ~ 95°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:78-TFBGA
  • Supplier Device Package:78-TWBGA (8x10.5)
  • Access Time:20 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS43TR81280B-125KBLI-TR

IS43TR81280B-125KBLI-TR

Memory IC Overview

The IS43TR81280B-125KBLI-TR is a 1Gb DDR3L SDRAM manufactured by ISSI. It features a 128Mx8 organization and operates at speeds up to 1600MT/s (DDR3-1600K). The device supports standard 1.5V and low-voltage 1.35V operation, utilizing a 78-ball BGA package measuring 8mm x 10.5mm. Key specifications include an 8n-bit prefetch architecture, eight internal banks, and programmable CAS latency. It includes dynamic on-die termination, write leveling, and partial array self-refresh capabilities for efficient power management.

Memory IC Feature Summary

  • Supports both standard 1.5V and low-voltage 1.35V operation with backward compatibility
  • Features an 8n-bit prefetch architecture with eight internal banks for concurrent operations
  • Includes dynamic on-die termination and write leveling for signal integrity
  • Provides partial array self-refresh and auto self-refresh modes for power efficiency

Memory IC Applications

  • Mobile computing devices requiring low-power memory solutions
  • Embedded systems utilizing DDR3L interfaces
  • Industrial applications operating within commercial or industrial temperature ranges

Memory IC Procurement Notes

Verify the specific speed bin designation '125K' corresponds to the required DDR3-1600K timing parameters. Confirm that the 78-ball BGA package dimensions match the target PCB footprint. Ensure the ordering suffix '-TR' indicates tape-and-reel packaging if automated assembly is planned. Cross-reference the RoHS compliance status with current environmental regulations.

Memory IC Selection Notes

Select this component when a 1Gb density with an 8-bit data width is required in a compact 78-ball BGA form factor. Choose the 125K speed bin for systems targeting 1600MT/s transfer rates. Consider the low-voltage option for designs prioritizing power reduction over standard voltage levels. Verify that the controller supports the necessary mode register configurations for DLL and ODT settings.

Memory IC Part Context

This part belongs to the IS43TR81280B series of DDR3L SDRAMs from Integrated Silicon Solution Inc. It is designed as a high-density memory solution for mobile and embedded markets. The series offers flexibility through programmable mode registers and supports various speed grades to accommodate different system clock requirements.

Memory IC Replacement Considerations

Check for direct substitutes within the IS43TR81280B family with different speed bins such as 125J or 107M. Verify pin-to-pin compatibility with other 78-ball BGA DDR3L devices from ISSI or alternative manufacturers.

IS43TR81280B-125KBLI-TRIS43TR81280B-125KBLI-TR

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