IS66WVS2M8ALL-104NLI

Memory IC Overview

The IS66WVS2M8ALL-104NLI is a 16Mb SerialRAM device manufactured by ISSI, utilizing a self-refresh DRAM array organized as 2M words by 8 bits. It supports SPI and QPI protocols with a maximum clock rate of 104MHz for fast read operations. The component operates on a single 1.65V to 1.95V voltage supply and features an 8-pin SOIC package. Key performance metrics include a maximum clock-to-access time of 7ns at 104MHz and a typical standby current of 150µA.

Memory IC Feature Summary

• Supports industry-standard SPI (1-1-1, 1-4-4) and QPI (4-4-4) protocols with low signal counts.
• Features configurable wrapped burst lengths of 32 or 1024 bytes within a 1024-byte page size.
• Includes hidden refresh operation and in-band reset functionality via existing SPI signals.
• Provides hardware features such as 50 ohm drive strength and power-on initialization.

Memory IC Applications

• Industrial embedded systems requiring low pin count memory solutions
• Automotive applications compatible with Industrial temperature grades
• Consumer electronics utilizing serial interface architectures

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and temperature grade compliance. Confirm that the procurement specifications align with the required SPI/QPI protocol support and voltage supply range. Ensure that environmental certifications match the project requirements before finalizing orders.

Memory IC Selection Notes

Select this component when a pseudo-SRAM solution with serial interface capabilities is required for space-constrained designs. Consider the 104MHz fast read performance and low standby current for power-sensitive applications. Verify compatibility with host controller SPI/QPI controllers and ensure the 8-pin SOIC package fits the PCB layout constraints.

Memory IC Part Context

This part belongs to the IS66/67WVS2M8ALL/BLL family of 16Mb SerialRAM devices from Integrated Silicon Solution Inc. These devices integrate Pseudo SRAM technology using self-refresh DRAM arrays, offering high performance with minimal I/O pins. The family supports both 1.8V and 3.0V operating voltages across various industrial and automotive temperature grades.

Memory IC Replacement Considerations

Check for other variants within the IS66WVS2M8ALL/BLL series that may offer different package options or temperature grades. Verify functional equivalence regarding SPI/QPI command sets and electrical characteristics before substituting.