Gate Driver ISL6612BECB product image

ISL6612BECB

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:1d1db92df4a4 Category: Brand:

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ISL6612BECB is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for ISL6612BECB

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:7V ~ 13.2V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):1.25A, 2A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):26ns, 18ns
  • Operating Temperature:0°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package:8-SOIC-EP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):36 V

Gate Driver datasheet and documents for ISL6612BECB

ISL6612BECB

Gate Driver Overview

The ISL6612BECB is a synchronous buck MOSFET high-side gate driver manufactured by Renesas Electronics Corporation. It features an 8-lead SOIC N EP package with an exposed pad for thermal management. The device provides two independent drivers with a peak output current of 3 A. It operates within a supply voltage range up to 13.2 V and supports junction temperatures from -40°C to +85°C. Key electrical characteristics include a maximum propagation delay of 10 ns, a rise time of 26 ns, and a fall time of 18 ns.

Gate Driver Feature Summary

  • Integrated synchronous buck architecture designed for efficient high-side switching control
  • Exposed pad (EP) lead frame configuration to enhance thermal dissipation capabilities
  • High-speed signal transmission with minimal propagation delay for precise timing control

Gate Driver Applications

  • Synchronous buck converter circuits in power distribution systems
  • Point-of-load (POL) voltage regulation modules
  • DC-DC conversion stages requiring fast transient response

Gate Driver Procurement Notes

Verify the specific suffix 'BECB' against official Renesas documentation to confirm pinout compatibility and thermal pad specifications. Confirm end-of-life status and obsolescence notices prior to design finalization. Ensure the selected package variant matches the PCB footprint requirements for the exposed pad thermal interface.

Gate Driver Selection Notes

Select this component when a dedicated synchronous buck driver with integrated thermal performance is required. Compare the 3 A drive strength against load requirements to ensure adequate MOSFET switching capability. Evaluate the -40°C to +85°C operating range against environmental constraints. Consider the SOIC N EP package dimensions for board space optimization.

Gate Driver Part Context

This part belongs to the ISL6612 series of gate drivers, which are optimized for driving N-channel MOSFETs in high-frequency power applications. The series includes variants with different packaging and temperature ratings to suit diverse industrial and consumer electronics needs.

Gate Driver Replacement Considerations

Cross-reference with ISL6612BEIBZ for similar synchronous buck functionality. Verify package differences between SOIC N EP and other available footprints before substitution.

ISL6612BECBISL6612BECB

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