Single Diodes IV1D06006P3 product image

IV1D06006P3

$4.44
  • Description:DIODE SIL CARB 650V 16.7A TO2523
  • Series:-
  • Mfr:Inventchip
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:4d43887723f3 Category: Brand:

  
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IV1D06006P3 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Inventchip. Its product description is DIODE SIL CARB 650V 16.7A TO2523. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for IV1D06006P3

  • Description:DIODE SIL CARB 650V 16.7A TO2523
  • Series:-
  • Mfr:Inventchip
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):16.7A
  • Voltage - Forward (Vf) (Max) @ If:1.65 V @ 6 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 650 V
  • Capacitance @ Vr, F:224pF @ 1V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252-3
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for IV1D06006P3

IV1D06006P3

Single Diodes Overview

The IV1D06006P3 is a Silicon Carbide (SiC) Schottky diode manufactured by Inventchip Technology. It features a maximum repetitive reverse voltage of 650 V and a continuous forward current rating of 16.7 A in a surface-mount TO-252-3 package. Key electrical characteristics include a forward voltage of 1.45 V at 6 A, a reverse leakage current of 1 µA at 650 V, and a non-repetitive peak forward surge current of 42 A. The device operates within a junction temperature range of -55°C to +175°C.

Single Diodes Feature Summary

  • Utilizes Silicon Carbide semiconductor material for high thermal stability and efficiency
  • Features a standalone diode configuration with low reverse leakage current
  • Designed for surface-mount assembly in a compact TO-252-3 package

Single Diodes Applications

  • High-frequency power conversion circuits
  • DC-DC converter output rectification
  • Solar micro-inverter systems

Single Diodes Procurement Notes

Verify the specific datasheet version when sourcing, as manufacturers may update specifications over time. Confirm that the TO-252-3 package matches your PCB footprint requirements. Ensure the supplier provides original components from Inventchip Technology to guarantee performance reliability and compliance with the stated electrical limits.

Single Diodes Selection Notes

Select this component for applications requiring high-temperature operation up to 175°C junction temperature. The 650V rating suits medium-voltage DC bus applications. Consider the 16.7A continuous current limit for load calculations. The SiC technology offers advantages over silicon in high-efficiency, high-frequency environments where reduced switching losses are critical.

Single Diodes Part Context

Inventchip Technology specializes in Silicon Carbide power devices and gate driver ICs. Founded in 2017, the company focuses on developing advanced semiconductor solutions. The IV1D06006P3 belongs to their series of SiC Schottky diodes, designed to replace traditional silicon rectifiers in modern power electronics for improved performance.

Single Diodes Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official Inventchip resources or authorized distributors for validated cross-reference data before substituting this component in existing designs.

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