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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE TO220-5
- Series:-
- Mfr:IXYS
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 35V
- Logic Voltage - VIL, VIH:0.8V, 3.5V
- Current - Peak Output (Source, Sink):14A, 14A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):22ns, 20ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-5
- Supplier Device Package:TO-220-5
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The IXDN414CI is a low-side ultrafast MOSFET gate driver manufactured by IXYS. It is designed to source and sink 14A of peak current, enabling voltage rise and fall times of less than 30ns for driving latest IXYS MOSFETs and IGBTs. The device operates with a supply voltage range of 4.5V to 35V and features a non-inverting output interface. It is housed in a TO-220-5 package suitable for through-hole mounting and supports an operating temperature range from -40°C to 125°C.
Feature Summary
- High peak current capability of 14A for rapid switching
- Ultrafast performance with rise and fall times under 30ns
- Non-inverting logic interface for direct control
Applications
- Driving IXYS MOSFETs in power conversion circuits
- Driving IXYS IGBTs in motor control applications
- High-speed switching power supplies
Procurement Notes
Verify the specific suffix 'CI' corresponds to the TO-220-5 package and commercial temperature grade when sourcing. Confirm RoHS compliance status as manufacturing practices may evolve. Ensure the supplier provides official datasheets matching the IXYS Corporation origin to avoid counterfeit components. Check for any obsolete status notifications from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component for applications requiring high peak drive current and fast switching speeds for low-side configurations. The TO-220-5 package offers robust thermal performance and ease of manual assembly or wave soldering. Consider the 14A peak current rating against the gate charge requirements of the target MOSFET or IGBT to ensure adequate drive strength without exceeding the driver's limits.
Part Context
The IXDN414CI belongs to the IXYS IXDI/N414 series of gate drivers. This family is engineered specifically for driving power semiconductors like MOSFETs and IGBTs with high efficiency. The series emphasizes speed and current capability to minimize switching losses in high-frequency power electronics designs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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