IXFT86N30T

Single FETs, MOSFETs Overview

The IXFT86N30T is an N-channel Power MOSFET from the HiPerFET family, manufactured by IXYS (now part of Littelfuse). It utilizes Trench technology in a D3PAK-3 (TO-268-3) surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 300 V and a continuous drain current (Id) of 86 A at 25°C. The device features a maximum on-resistance (Rds(on)) of 43 mΩ with a gate-source voltage (Vgs) of 10 V. Gate charge (Qg) is specified at 180 nC, and the threshold voltage (Vgs(th)) is typically 5 V. It operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Employs IXYS HiPerFET trench technology for enhanced switching performance and low conduction losses.
• Designed for high-voltage applications with a 300 V drain-source breakdown rating.
• Optimized for surface-mount assembly using the D3PAK-3 package format.

Single FETs, MOSFETs Applications

• High-frequency power supplies
• Motor control systems
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as IXYS was acquired by Littelfuse. Ensure the ordering suffix matches the specific tape-and-reel or tube packaging variant required for your assembly line. Confirm RoHS compliance status and lead-free specifications against the latest datasheet revision before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 300 V N-channel MOSFET with moderate current handling is required in a surface-mount form factor. Compare Rds(on) and gate charge values against alternative packages like TO-247 if higher thermal dissipation or lower resistance is needed. Ensure the driver circuit can handle the 180 nC gate charge requirement for efficient switching.

Single FETs, MOSFETs Part Context

This device belongs to the IXYS HiPerFET series, known for combining low on-resistance with fast switching speeds. The D3PAK-3 package provides a balance between thermal performance and PCB space efficiency, making it suitable for mid-power industrial and consumer electronics applications where through-hole mounting is not feasible.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements may include other 300V N-channel MOSFETs in D3PAK-3 packages with similar Rds(on) and Id ratings. Verify that any substitute maintains equivalent gate charge and thermal characteristics to ensure circuit stability without redesigning the heatsinking or drive logic.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature for the IXFT86N30T?

The maximum operating junction temperature is +150°C.

Is the IXFT86N30T available in a through-hole package?

No, the IXFT86N30T is specifically packaged in the D3PAK-3 (TO-268-3) surface-mount format. Through-hole variants in the same family use different part numbers, such as those in TO-247 packages.