JAN1N5529C-1

Single Zener Diodes Overview

The JAN1N5529C-1 is a low voltage avalanche Zener diode manufactured by Microchip Technology. It provides a nominal Zener voltage of 9.1 V with a tolerance of ±2%. The device operates in the DO-35 (DO-204AH) axial-lead glass package and dissipates up to 500 mW. Qualified per MIL-PRF-19500/437, it features a maximum reverse leakage current of 0.1 µA at 9 V and a maximum dynamic impedance of 45 Ohms.

Single Zener Diodes Feature Summary

• Hermetically sealed glass DO-35 package construction
• Qualified for military reliability standards
• Internal metallurgical bond option
• Minimal capacitance characteristics

Single Zener Diodes Applications

• Voltage regulation over broad operating ranges
• Radiation-hardened circuit designs
• Precision reference voltage generation

Single Zener Diodes Procurement Notes

Verify that the specific part number includes the required suffixes for intended qualification levels and packaging options. Confirm compliance requirements against project specifications, as standard versions may not meet all environmental or material restrictions. Cross-reference datasheet electrical limits with system design margins before finalizing procurement orders.

Single Zener Diodes Selection Notes

Select this component when a precise 9.1 V reference with tight tolerance is required in an axial-lead form factor. Ensure the application environment supports the specified temperature range and power dissipation limits. Consider the metallurgical bond requirement if radiation hardness or enhanced mechanical stability is necessary for the deployment scenario.

Single Zener Diodes Part Context

This component belongs to the 1N5518B through 1N5546B-1 series of low voltage avalanche Zener diodes. The series covers a voltage selection from 3.3 to 33 volts. The JAN designation indicates a specific military reliability level within the broader product family offered by Microchip Technology.

Single Zener Diodes Replacement Considerations

JAN1N5529D-1