JAN1N5711UBCC

$62.49

Description：DIODE ARRAY SCHOTTKY 50V 33MA UB
Series：-

SKU:6c9027ddd24e Category: Diode Arrays Brand: Microchip Technology

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Product introduction

JAN1N5711UBCC is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 50V 33MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JAN1N5711UBCC

Description：DIODE ARRAY SCHOTTKY 50V 33MA UB
Series：-
Mfr：Microchip Technology
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：50 V
Current - Average Rectified (Io) (per Diode)：33mA
Voltage - Forward (Vf) (Max) @ If：1 V @ 15 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：200 nA @ 50 V
Operating Temperature - Junction：-65°C ~ 150°C
Mounting Type：Surface Mount
Package / Case：4-SMD, No Lead
Supplier Device Package：UB
Grade：Military
Qualification：MIL-PRF-19500/444

Diode Arrays datasheet and documents for JAN1N5711UBCC

JAN1N5711UBCC

Diode Arrays Overview

The JAN1N5711UBCC is a silicon Schottky barrier diode manufactured by Microchip Technology. It features a ceramic surface-mount package designated as UB-3. The device is qualified to MIL-PRF-19500/444 standards for high-reliability applications. Key electrical parameters include a maximum repetitive reverse voltage of 70 V and an average forward current rating of 33 mA. The component operates within a junction temperature range of -65°C to +150°C.

Diode Arrays Feature Summary

Ceramic encapsulation designed for military-grade reliability
Surface-mount configuration compatible with automated assembly
Schottky technology providing low forward voltage characteristics

Diode Arrays Applications

High-reliability aerospace systems
Military communication equipment
Harsh environment pulse applications

Diode Arrays Procurement Notes

Verify the specific suffix 'UBCC' against the official Microchip datasheet to confirm the exact package variant and qualification level. Ensure the procurement channel provides valid traceability documentation required for MIL-PRF-19500/444 components. Confirm RoHS status, as military variants may differ from commercial equivalents.

Diode Arrays Selection Notes

Select this component when a ruggedized surface-mount Schottky diode is required for critical systems. The ceramic package offers superior environmental resistance compared to plastic alternatives. Consider the 33 mA current limit and 70 V blocking capability during circuit design to ensure operation within safe limits.

Diode Arrays Part Context

This part belongs to the 1N5711UB family of Schottky barrier diodes. It serves as the surface-mount equivalent to traditional axial-leaded 1N5711 devices. The JAN prefix indicates it meets the basic military quality requirements defined in the relevant performance specification.