Diode Arrays JAN1N5712UBCC product image

JAN1N5712UBCC

$62.10
  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-

SKU:3f8f833b8c56 Category: Brand:

  
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JAN1N5712UBCC is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JAN1N5712UBCC

  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io) (per Diode):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JAN1N5712UBCC

JAN1N5712UBCC

Diode Arrays Overview

The JAN1N5712UBCC is a Schottky barrier diode manufactured by Microchip Technology, designed for high-reliability applications. It features a ceramic surface-mount package and complies with MIL-PRF-19500/444 specifications. The device offers a maximum DC reverse voltage of 20 V and an average rectified forward current of 75 mA. Key electrical parameters include a maximum reverse leakage current of 150 nA at 16 V and a typical forward voltage drop of 1 V at 35 mA. The junction capacitance is specified as 2 pF at 0 V and 1 MHz. Operating temperatures range from -65°C to +150°C.

Diode Arrays Feature Summary

  • Ceramic surface-mount construction for enhanced durability in harsh environments
  • Qualified per MIL-PRF-19500/444 for military-grade reliability
  • Low forward voltage drop characteristic for efficient power conversion
  • Unidirectional polarity configuration available

Diode Arrays Applications

  • High-reliability aerospace systems
  • Military-grade electronic circuits
  • Spacecraft power management units
  • Harsh environment signal processing

Diode Arrays Procurement Notes

Verify the specific suffix codes (UB, CC) against the manufacturer's official datasheet to ensure correct package type and qualification level. Confirm that the JAN grade meets the required radiation hardness and quality standards for your specific application. Check for RoHS compliance status if environmental regulations apply to your project requirements.

Diode Arrays Selection Notes

Select this component when a ruggedized, ceramic-packaged Schottky diode is required for critical systems. Ensure the 20 V reverse voltage rating exceeds the peak inverse voltage in the circuit. Verify that the 75 mA current capacity aligns with the load requirements. Consider the surface-mount form factor for PCB layout constraints compared to axial-leaded alternatives.

Diode Arrays Part Context

This part belongs to the 1N571x series of Schottky barrier diodes produced by Microchip Technology. It serves as the surface-mount equivalent to the JEDEC registered 1N5712 number. The series includes various qualification levels such as JANTX and JANS, catering to different reliability tiers within the military and aerospace sectors.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not provided in the available documentation. Consult the manufacturer's cross-reference guide or datasheet for approved equivalents.

JAN1N5712UBCCJAN1N5712UBCC
$62.10
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