JANS1N5712UBCC

$127.95

Description：DIODE ARRAY SCHOTTKY 16V 75MA UB
Series：-

SKU:036105b610aa Category: Diode Arrays Brand: Microchip Technology

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Product introduction

JANS1N5712UBCC is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANS1N5712UBCC

Description：DIODE ARRAY SCHOTTKY 16V 75MA UB
Series：-
Mfr：Microchip Technology
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：16 V
Current - Average Rectified (Io) (per Diode)：75mA
Voltage - Forward (Vf) (Max) @ If：1 V @ 35 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：150 nA @ 16 V
Operating Temperature - Junction：-65°C ~ 150°C
Mounting Type：Surface Mount
Package / Case：4-SMD, No Lead
Supplier Device Package：UB
Grade：Military
Qualification：MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANS1N5712UBCC

JANS1N5712UBCC

Diode Arrays Overview

The JANS1N5712UBCC is a small-signal Schottky barrier diode manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 16 V and an average forward rectified current of 75 mA. The device utilizes silicon technology and is housed in the UB-3 surface-mount package, also identified as LCC-3. It operates within a junction temperature range of -65°C to +150°C. Key electrical characteristics include a maximum DC reverse leakage current of 150 nA at 16 V and a typical forward voltage of 1 V at 35 mA. The component has a capacitance of 2 pF at 0 V and 1 MHz.

Diode Arrays Feature Summary

Ceramic encapsulated construction designed for high-reliability environments
Qualified per MIL-PRF-19500/444 for JANS military grade applications
Surface mount equivalent to JEDEC registered 1N5712 numbers

Diode Arrays Applications

High-reliability aerospace systems
Military electronic circuits
Spacecraft power management

Diode Arrays Procurement Notes

Verify the specific suffix configuration against the official datasheet to ensure compliance with required military qualification levels. Confirm that the ceramic package variant matches the design requirements for radiation hardness and thermal performance. Cross-reference the manufacturer's latest product change notifications to validate current production status and material composition before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a hermetically sealed, ceramic-packaged Schottky diode is required for extreme environmental conditions. The JANS qualification ensures suitability for missions where standard commercial or industrial grades are insufficient. Ensure the circuit design accommodates the specific voltage and current ratings defined for the UB-3 package form factor.

Diode Arrays Part Context

This part belongs to the 1N571x-1 series of Schottky barrier diodes produced by Microchip Technology. It serves as the surface-mount counterpart to traditional axial-leaded DO-35 packages. The series includes various qualification levels, with this specific unit designated for the most stringent JANS reliability standards.