JANS1N5712UBD/TR

Diode Arrays Overview

The JANS1N5712UBD/TR is a single silicon Schottky barrier diode manufactured by Microchip Technology. It features a surface-mount LCC-3 package configuration and operates within a junction temperature range of -65°C to +150°C. Key electrical parameters include a maximum repetitive reverse voltage (Vrrm) of 16 V, a forward current (If) of 75 mA, and a forward voltage (Vf) of 1 V at the specified current. The device exhibits a low reverse leakage current (Ir) of 150 nA.

Diode Arrays Feature Summary

• Ceramic encapsulated construction designed for high-reliability military applications
• Surface mount UB package equivalent to axial-leaded JEDEC registered numbers
• Qualified per MIL-PRF-19500/444 JANS level standards

Diode Arrays Applications

• High-reliability aerospace systems requiring radiation hardness
• Military-grade signal processing circuits
• Spacecraft power management and rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'JANS' confirms the required radiation-hardened qualification level against project specifications. Confirm the LCC-3 package footprint matches the PCB layout. Check for recent Product Change Notifications regarding assembly site or material updates. Ensure compliance with export control regulations associated with military-grade semiconductor components.

Diode Arrays Selection Notes

Select this component when a radiation-tolerant Schottky diode is required for space or defense environments. Compare the 16 V rating against circuit peak inverse voltage requirements. Consider the 75 mA forward current capability for load matching. Verify that the ceramic package provides necessary thermal and mechanical stability for the intended operational environment.

Diode Arrays Part Context

This part belongs to the 1N5712 family of Schottky barrier diodes. It serves as the surface-mount alternative to traditional axial packages while maintaining military reliability standards. The JANS designation indicates it meets strict qualification criteria for nuclear and radiation environments, distinguishing it from commercial or standard military JAN variants.

Diode Arrays Replacement Considerations

• JANTX1N5712UBD/TR
• JAN1N5712UBD/TR

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Is this component RoHS compliant?

No, the JANS1N5712UBD/TR is not RoHS compliant.

What is the reverse leakage current specification?

The reverse leakage current is specified at 150 nA.