Diode Arrays JANS1N5712UBD product image

JANS1N5712UBD

$127.82
  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-

SKU:12ef12ff10db Category: Brand:

  
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JANS1N5712UBD is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANS1N5712UBD

  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io) (per Diode):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANS1N5712UBD

JANS1N5712UBD

Diode Arrays Overview

The JANS1N5712UBD is a single silicon Schottky barrier diode manufactured by Microchip Technology. It features a surface-mount UB package and is qualified to the JANS level of MIL-PRF-19500/444 for high-reliability applications. Key electrical parameters include a maximum repetitive reverse voltage (Vrrm) of 16 V, a forward current (If) of 35 mA, and a forward voltage (Vf) of 1 V at specified conditions. The device exhibits a reverse leakage current (Ir) of 150 nA and operates within a junction temperature range of -65°C to +150°C.

Diode Arrays Feature Summary

  • Qualified to JANS level per MIL-PRF-19500/444 for high-reliability military and aerospace applications
  • Utilizes ceramic encapsulation in a UB surface-mount package for robust performance
  • Provides low forward voltage drop characteristic typical of Schottky barrier technology

Diode Arrays Applications

  • High-reliability military electronic systems
  • Aerospace circuit protection and rectification
  • Spacecraft power management subsystems

Diode Arrays Procurement Notes

Verify the specific suffix 'JANS' confirms the required radiation-hardened qualification level. Confirm the UB package type matches the PCB footprint requirements. Ensure compliance with relevant defense procurement standards and export control regulations applicable to JANS-qualified components.

Diode Arrays Selection Notes

Select this component when radiation tolerance and long-term reliability are critical. Compare against JAN or JANTX variants if environmental constraints allow lower qualification levels. Verify that the 16 V reverse voltage rating meets the peak inverse voltage requirements of the target circuit design.

Diode Arrays Part Context

This part belongs to the 1N5712 series of small-signal Schottky diodes. It serves as the surface-mount equivalent of axial-leaded versions like the 1N5712-1. The JANS designation indicates it meets strict screening and testing criteria defined by the MIL-PRF-19500/444 specification for space-grade electronics.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other JANS-qualified Schottky diodes from the same manufacturer family only if pinout and electrical ratings are identical.

JANS1N5712UBDJANS1N5712UBD
$127.82
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