JANSM2N3501

Single Bipolar Transistors Overview

The JANSM2N3501 is a silicon NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-39 (TO-205AD) through-hole metal can package. The device supports a maximum collector-emitter voltage of 150 V and a continuous collector current of 300 mA. Power dissipation is rated at 1 W. The component operates within a temperature range of -65°C to +200°C. It features a minimum DC current gain of 35 and a maximum of 120. The saturation voltage is specified at 200 mV.

Single Bipolar Transistors Feature Summary

• High-temperature operation capability up to 200°C
• Military-grade reliability with MIL-PRF-19500/366 qualification
• Robust metal can construction for harsh environments

Single Bipolar Transistors Applications

• Military aerospace electronic systems
• High-temperature industrial control circuits
• Ruggedized signal amplification applications

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability documentation required for military procurement contracts. Confirm that the delivered components match the JANSM2N3501 designation exactly, as suffixes may indicate different testing standards or packaging variations. Ensure compliance with applicable export control classifications and material declarations prior to integration into final assemblies.

Single Bipolar Transistors Selection Notes

Select this component when high-temperature stability and military reliability are mandatory requirements. The TO-39 package provides superior thermal and mechanical robustness compared to plastic alternatives. Consider the 150V breakdown voltage and 300mA current limits to ensure adequate headroom for the intended circuit design under extreme operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2N3501 family of NPN transistors produced by Microchip Technology. Variants such as the standard 2N3501 and commercial versions exist, but the JAN prefix specifically denotes military-grade screening and testing. The JANSM2N3501 represents a screened version optimized for demanding operational environments requiring extended temperature ranges.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the JAN2N3501L and JANTXV2N3501. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure the alternative part meets the same military qualification standards if the application requires them.