JANTXV1N6660DT1

Diode Arrays Overview

The JANTXV1N6660DT1 is a dual Schottky barrier rectifier manufactured by Microsemi Corporation, designed for high-efficiency power conversion applications. This component features two independent internal diodes configured in a common cathode arrangement within a single TO-254AA (TO-254-3) surface-mount package. It is rated for a maximum repetitive peak reverse voltage of 45 V and supports an average forward rectified current of 15 A. The device utilizes silicon technology to ensure reliable operation across a wide temperature range from -65°C to 150°C junction temperature. Key electrical characteristics include a maximum forward voltage drop of 750 mV at 15 A and a low reverse leakage current of 1 mA at 45 V. The unit exhibits a typical junction capacitance of 2000 pF at 5 V reverse bias and 1 MHz frequency, making it suitable for fast-switching environments.

Diode Arrays Feature Summary

• Dual Schottky configuration with common cathode topology for efficient power management
• High current handling capability with 15 A average forward rectified current rating
• Robust thermal performance supporting junction temperatures up to 150°C
• Low forward voltage drop characteristic minimizing conduction losses

Diode Arrays Applications

• DC-DC converter output rectification
• Free-wheeling diode applications in switching power supplies
• Power factor correction circuits
• Solar panel blocking diodes

Diode Arrays Procurement Notes

Verify the specific suffix DT1 corresponds to the TO-254AA surface-mount package when sourcing replacements. Confirm that the JANTX designation indicates military-grade screening requirements if applicable to your system specifications. Ensure compatibility with lead-free soldering processes if RoHS compliance is required, noting that this specific part may not meet standard RoHS directives depending on the manufacturing batch. Cross-reference the manufacturer's latest datasheet for any recent product change notifications affecting pinout or mechanical dimensions.

Diode Arrays Selection Notes

Select this component when a dual Schottky rectifier with high current capacity is required in a compact surface-mount form factor. The 45 V reverse voltage rating limits its use to low-voltage DC bus applications. Consider the 2000 pF capacitance value for high-frequency switching designs, as lower capacitance alternatives may be needed for RF-sensitive circuits. The common cathode configuration simplifies circuit layout by providing a shared ground reference for both diode terminals.

Diode Arrays Part Context

This part belongs to the JANTX series of radiation-hardened and military-specification semiconductors produced by Microsemi. The JANTXV prefix typically denotes enhanced testing and screening levels compared to standard commercial parts. The 1N6660 base number identifies the fundamental electrical characteristics of the Schottky rectifier, while the DT1 suffix specifies the dual-diode array configuration and the TO-254AA package style. This family is commonly used in aerospace, defense, and industrial applications requiring high reliability.

Diode Arrays Replacement Considerations

• JAN1N6660DT1

Diode Arrays FAQ

What is the internal configuration of the JANTXV1N6660DT1?

The device contains two independent Schottky diodes connected in a common cathode configuration within a single TO-254AA package.

What is the maximum operating junction temperature for this component?

The maximum operating junction temperature is specified as 150°C.