LH28F160S5HNS-S1

Memory IC Overview

The LH28F160S5HNS-S1 is a 16M-bit Smart 5 Flash memory organized as 2MBx8 or 1MBx16. It features a symmetrically-blocked architecture with thirty-two 64K-byte individually erasable blocks. Access times are 70ns at VCC=5V±0.25V and 90ns at VCC=5V±0.5V. The device supports 5V VCC and 5V VPP operation, includes two 32-byte page buffers for high-speed writes, and offers enhanced suspend capabilities. It operates within an extended temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Smart 5 technology enables flexible voltage combinations using 5V VCC and 5V VPP without requiring separate 12V converters.
• Enhanced automated suspend options allow write suspension to read, block erase suspension to write, and block erase suspension to read.
• High-density symmetrically-blocked architecture provides thirty-two 64K-byte erasable blocks with individual locking and unlocking capabilities.
• Compliance with Common Flash Interface (CFI) and Scalable Command Set (SCS) specifications ensures universal and upgradable system interfaces.

Memory IC Applications

• Resident flash arrays
• SIMMs and memory cards
• Code and data storage applications

Memory IC Procurement Notes

Verify the specific ordering suffix NS-S1 against the manufacturer's current product specification EL16X079 Rev 2.0 to confirm package type and lead-free status. Ensure compatibility with the required operating temperature range of -40°C to +85°C. Confirm that the system design accommodates the 56-lead SSOP physical dimensions and pinout configuration.

Memory IC Selection Notes

Select this component for systems requiring high-density nonvolatile storage with flexible voltage configurations. The device is suitable for applications needing code execution directly from flash or download to DRAM. Consider the extended cycling capability and enhanced data protection features when designing for secure code storage environments.

Memory IC Part Context

This part belongs to Sharp Microelectronics' LH28F160 series of Smart 5 Flash memories. It utilizes ETOX V nonvolatile flash technology manufactured on a 0.35µm CMOS process. The device is designed for board-constrained applications due to its industry-standard 56-Lead SSOP packaging.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-compatibility with other LH28F160 variants based on specific electrical and pinout requirements.

Memory IC FAQ

How does the STS pin function during internal operations?

The STS pin indicates the status of the internal Write State Machine. When low, it signifies that the machine is performing block erase, full chip erase, (multi) word/byte write, or block lock-bit configuration. It floats to high-impedance when ready for new commands or during suspend modes.

What data protection mechanisms are included?

The device offers absolute protection with VPP at GND, flexible hardware block locking via WP#, and software block locking. It also includes erase/write lockout during power transitions when VCC is below the lockout voltage or RP# is low.