M25PE10-VMN6TPBA TR

Memory IC Overview

The M25PE10-VMN6TPBA TR is a Micron NOR Flash memory device with a capacity of 1Mb (128K x 8). It features an SPI-compatible serial interface and operates on a single 2.7V to 3.6V supply. The component supports a maximum clock rate of 75 MHz and utilizes a SOIC-8 package. Key electrical parameters include a typical page program time of 0.8ms, a typical page erase time of 10ms, and a deep power-down current of 1µA.

Memory IC Feature Summary

• Supports byte alterability for flexible data modification
• Features advanced write protection mechanisms
• Includes deep power-down mode for low standby consumption

Memory IC Applications

• Embedded systems requiring non-volatile code storage
• Industrial control applications
• Consumer electronics firmware storage

Memory IC Procurement Notes

Verify the specific suffix 'TR' against official Micron documentation to confirm tape-and-reel packaging status. Confirm that the 'VMN6TPBA' designation aligns with the required industrial temperature range and pinout specifications. Ensure compatibility with existing board layouts before procurement.

Memory IC Selection Notes

Select this part for designs needing 1Mb SPI NOR flash with industrial temperature ratings. Compare against the M25P10 series if higher voltage tolerance or different packaging is required. Verify that the 75 MHz speed meets system timing requirements.

Memory IC Part Context

This component belongs to the M25PE10/M25PE20 Serial Flash Embedded Memory family. These devices are designed for high-performance embedded applications, offering standard pinouts and SPI bus compatibility. The M25PE10 variant specifically provides 1Mb density within this product line.

Memory IC Replacement Considerations

Public confirmed substitute part numbers were not identified in the provided source material.