M3SWA2-34DR+

RF Switches Overview

The M3SWA2-34DR+ is a Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) Single-Pole Double-Throw (SPDT) absorptive switch. It features an integrated driver and operates from DC to 30 GHz. The device provides an insertion loss of 0.6 dB and supports a control voltage range of 1.8 V to 3.6 V. Packaged in a 16-QFN (3x3 mm) surface-mount format, it maintains a 50 Ohm impedance.

RF Switches Feature Summary

• Absorptive SPDT architecture for improved isolation
• Integrated internal driver circuitry
• Wideband operation from DC to 30 GHz

RF Switches Applications

• Radar systems
• Test and measurement equipment
• Wireless infrastructure

RF Switches Procurement Notes

Verify the specific suffix (+ or -D+) against the required datasheet revision. Confirm the package type matches the design layout. Ensure the operating environment aligns with the component's environmental rating specifications before finalizing procurement.

RF Switches Selection Notes

Select this component for high-frequency applications requiring wide bandwidth up to 30 GHz. The absorptive design offers superior isolation compared to reflective switches. Verify that the system control logic supports the specified 1.8 V to 3.6 V input voltage range for proper switching operation.

RF Switches Part Context

This part belongs to Mini-Circuits' M3SWA2 series of GaAs MMIC switches. These components are engineered for compact, high-performance RF signal routing. The series utilizes advanced semiconductor technology to achieve low loss and high linearity in a small form factor suitable for modern electronic designs.

RF Switches Replacement Considerations

Check for direct substitutes within the same family, such as the M3SWA2-34DR-D+, which may share similar electrical characteristics but differ in packaging or environmental ratings. Verify pin compatibility and thermal requirements when considering alternatives.