Diode Arrays MA3J142D0L product image

MA3J142D0L

  • Description:DIODE ARRAY GP 80V 100MA SMINI3
  • Series:-

SKU:b564de6571c5 Category: Brand:

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MA3J142D0L is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARRAY GP 80V 100MA SMINI3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MA3J142D0L

  • Description:DIODE ARRAY GP 80V 100MA SMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):10 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 75 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:SC-85
  • Supplier Device Package:SMini3-F1
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MA3J142D0L

MA3J142D0L

Diode Arrays Overview

The MA3J142D0L is a silicon epitaxial planar switching diode manufactured by Panasonic Electronic Components. It contains two isolated elements within a single SMini3-F1 package, designed for high-density mounting in switching circuits. The device features an 80 V reverse voltage rating and supports a maximum peak forward current of 225 mA per element. Electrical characteristics include a forward voltage of 1.2 V at 100 mA, a reverse current of 100 nA at 75 V, and a terminal capacitance of 15 pF. The reverse recovery time is specified at 10 ns.

Diode Arrays Feature Summary

  • Contains two electrically isolated diode elements within a single surface-mount package to facilitate compact circuit design.
  • Engineered specifically for use in high-speed switching applications requiring fast response times.

Diode Arrays Applications

  • Switching circuits
  • General electronic equipment
  • Communications equipment

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation before procurement. Confirm that the component lifecycle status aligns with long-term production requirements. Ensure the selected package variant matches the intended PCB footprint. Cross-reference absolute maximum ratings with system operating conditions to prevent overstress during transient events.

Diode Arrays Selection Notes

Select this component when dual isolated switching functions are required in a minimal footprint. Evaluate the 10 ns reverse recovery time against signal frequencies to ensure adequate performance. Verify thermal management capabilities relative to the junction temperature limits under continuous load conditions.

Diode Arrays Part Context

This part belongs to the MA3J142 series of silicon epitaxial planar diodes from Panasonic. The series includes variants such as the MA3J142E, which shares similar packaging but may differ in specific electrical parameters. These components are classified as general-purpose switching diodes suitable for standard industrial and consumer electronics.

Diode Arrays Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Generic cross-references should be validated against pinout compatibility and electrical specifications prior to implementation.

Diode Arrays FAQ

What is the internal connection configuration of the MA3J142D?

The device contains two isolated elements. Pin 1 serves as the cathode for the first element, Pin 2 is the cathode for the second element, and Pin 3 acts as the common anode.

How does the MA3J142D differ from the MA3J142E?

While both share the same package and general structure, they are distinguished by their marking symbols (MO for D, MU for E) and potentially specific reverse recovery time variations defined in the datasheet.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 500 mA for a single element and 750 mA for double operation.

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