MA3S132E0L

Diode Arrays Overview

The MA3S132E0L is a silicon epitaxial planar switching diode manufactured by Panasonic Electronic Components. It features two isolated elements within an SSMini3-F2 package, designed for high-density mounting in switching circuits. The device supports a reverse voltage of 80 V and a maximum forward current of 100 mA per element. Key electrical characteristics include a low forward voltage of 1.2 V at 100 mA, minimal terminal capacitance of 2 pF, and a short reverse recovery time of 3 ns.

Diode Arrays Feature Summary

• Short reverse recovery time suitable for high-speed switching applications
• Small terminal capacitance to minimize signal interference
• Two isolated elements contained in one package for high-density mounting

Diode Arrays Applications

• Switching circuits
• General electronic equipment
• Communications equipment
• Measuring instruments

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm exact packaging and lifecycle status. Confirm that the component meets RoHS Directive compliance requirements for your region. Check for any maintenance or discontinued product notices on the manufacturer's website before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when a compact dual-diode solution with fast switching speeds is required. The low terminal capacitance makes it suitable for high-frequency applications. Ensure the operating temperature range aligns with the specified junction and storage limits. Verify that the 80 V reverse voltage rating exceeds the peak circuit voltages.

Diode Arrays Part Context

This part belongs to the MA3S132 series of silicon epitaxial planar diodes from Panasonic. It is functionally similar to the MA3S132D variant but offers superior switching performance with a reduced reverse recovery time. Both variants share the same SSMini3-F2 package and basic electrical ratings.

Diode Arrays Replacement Considerations

The MA3S132D is a documented alternative within the same series. Verify if the slightly longer reverse recovery time of the D variant is acceptable for the specific application requirements.

Diode Arrays FAQ

What is the reverse recovery time for the MA3S132E0L?

The reverse recovery time (trr) is 3 ns under conditions of IF = 10 mA, VR = 6 V, Irr = 0.1 IR, and RL = 100 Ω.

How many diode elements are included in the package?

The package contains two isolated diode elements.

What is the maximum reverse voltage rating?

The maximum reverse voltage (VR) is 80 V.