Diode Arrays MBR10100CS2TR-E1 product image

MBR10100CS2TR-E1

$0.20
  • Description:DIODE ARRAY SCHOT 100V 5A TO-263
  • Series:-

SKU:082839bafa63 Category: Brand:

  
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MBR10100CS2TR-E1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE ARRAY SCHOT 100V 5A TO-263. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR10100CS2TR-E1

  • Description:DIODE ARRAY SCHOT 100V 5A TO-263
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:850 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 100 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR10100CS2TR-E1

MBR10100CS2TR-E1

Diode Arrays Overview

The MBR10100CS2TR-E1 is a high voltage dual Schottky rectifier manufactured by Diodes Incorporated. It features two independent diode legs within a single TO-263-2 (D2PAK) surface-mount package, with each leg rated for a maximum average rectified forward current of 5 A and a peak repetitive reverse voltage of 100 V. The device exhibits a maximum instantaneous forward voltage drop of 0.85 V at +25°C and a maximum reverse leakage current of 0.1 mA at +25°C. Packaged in tape and reel format containing 800 pieces per reel, it supports an operating junction temperature range from -55°C to +150°C.

Diode Arrays Feature Summary

  • Dual common cathode configuration providing two independent Schottky barrier rectifiers in one component
  • Guard-ring design incorporated for enhanced stress protection during operation
  • Utilizes lead-free matte tin annealed terminals over a copper leadframe for solderability
  • Manufactured using halogen-free and antimony-free green molding compound

Diode Arrays Applications

  • Power supply output rectification
  • Power management circuits
  • Instrumentation systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix TR indicates tape and reel packaging rather than tube distribution. Confirm the E1 suffix aligns with required RoHS compliance standards for your assembly process. Ensure the TO-263-2 footprint matches your PCB layout guidelines. Check for any recent product change notices regarding manufacturing site updates or material substitutions before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a compact surface-mount solution is required for medium voltage applications. The dual configuration allows efficient implementation of full-wave rectification or power path management without occupying excessive board space. Consider the thermal resistance characteristics of the TO-263-2 package for heat dissipation requirements in your specific enclosure design.

Diode Arrays Part Context

This part belongs to the MBR10100C series of high voltage power Schottky rectifiers designed for switch mode power supplies and high-frequency converters. The series offers various package options including through-hole and surface-mount configurations to accommodate different manufacturing needs while maintaining consistent electrical performance across the product line.

Diode Arrays Replacement Considerations

MBR10100CS2-G1

Diode Arrays FAQ

What is the maximum non-repetitive peak surge current rating?

The device can withstand a non-repetitive peak surge current of 100 A under half-wave, single-phase, 60 Hz conditions applied at rated load.

How does the forward voltage drop change with temperature?

The maximum instantaneous forward voltage drop decreases as temperature increases, dropping from 0.85 V at +25°C to 0.75 V at +125°C when tested at 5 A.

Is the component suitable for high-frequency switching applications?

Yes, the device is specifically intended for high-frequency circuits where low switching losses and low noise are required due to its majority carrier conduction mechanism.

MBR10100CS2TR-E1MBR10100CS2TR-E1
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