MBR10150CTF-E1

Diode Arrays Overview

The MBR10150CTF-E1 is a high voltage dual Schottky rectifier manufactured by Diodes Incorporated, housed in a TO-220F-3 package. It features two independent diode elements with a common cathode configuration. The device supports a peak repetitive reverse voltage of 150 V and an average rectified forward current of 5 A per leg at +142°C case temperature. Maximum instantaneous forward voltage is 0.92 V at +25°C with 5 A current. Reverse leakage current is limited to 0.1 mA at rated DC voltage and +25°C. The component operates up to a junction temperature of +175°C.

Diode Arrays Feature Summary

• Low forward voltage drop for improved efficiency
• High surge current capacity for robust operation
• Guard-ring structure provides stress protection
• Lead-free finish compliant with RoHS directives

Diode Arrays Applications

• Power supply output rectification
• Power management circuits
• Instrumentation systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm compliance requirements and packaging details. Confirm that the TO-220F-3 package variant matches the thermal and mechanical constraints of the target design. Ensure procurement channels are authorized to guarantee product authenticity and traceability.

Diode Arrays Selection Notes

Select this component for medium voltage applications requiring low switching losses and minimal noise generation. Evaluate thermal resistance parameters relative to the intended heat sink layout. Consider the maximum operating junction temperature when designing for high ambient environments or constrained cooling solutions.

Diode Arrays Part Context

This part belongs to the MBR series of high voltage power Schottky rectifiers from Diodes Incorporated. The series includes variants with different current ratings and package options, such as the standard TO-220-3. The MBR10150C family is designed specifically for high-frequency circuits where low noise and fast switching characteristics are critical performance factors.

Diode Arrays Replacement Considerations

MBR10150CT-G1

Diode Arrays FAQ

What is the maximum non-repetitive peak surge current rating?

The device can withstand a non-repetitive peak surge current of 100 A under half-wave, single-phase, 60 Hz conditions applied at rated load.

How does the forward voltage change at elevated temperatures?

The maximum instantaneous forward voltage decreases to 0.82 V when tested at a case temperature of +125°C with a 5 A forward current.

Is the device suitable for high-frequency operation?

Yes, the MBR10150CTF-E1 is intended for use in high-frequency circuits due to its low switching losses and low noise characteristics.