MBR20045CT

$63.89

Description：DIODE MOD SCHOTT 45V 200A 2TOWER
Series：-

SKU:e3df2ae423b3 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR20045CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20045CT

Description：DIODE MOD SCHOTT 45V 200A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：45 V
Current - Average Rectified (Io) (per Diode)：200A (DC)
Voltage - Forward (Vf) (Max) @ If：650 mV @ 100 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：5 mA @ 20 V
Operating Temperature - Junction：-
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR20045CT

MBR20045CT

Diode Arrays Overview

The MBR20045CT is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a twin tower package configuration with an average forward current rating of 200 A per package and a repetitive peak reverse voltage of 45 V. The device exhibits a maximum forward voltage of 0.70 V per leg at Tj = 100 °C and a thermal resistance junction-case of 0.45 °C/W per leg. Operating temperature ranges from -55 °C to +150 °C, with a peak forward surge current capability of 1500 A.

Diode Arrays Feature Summary

High surge current capability for robust transient handling
Twin tower package design for efficient mounting
Low forward voltage drop for improved efficiency
Not sensitive to electrostatic discharge

Diode Arrays Applications

Low voltage high frequency inverters
Free wheeling rectification
Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Ensure that the procurement specifications align with the required voltage and current ratings for the intended application environment. Cross-reference the manufacturer's latest datasheet to confirm compliance with RoHS standards and other regulatory requirements before finalizing orders.

Diode Arrays Selection Notes

Select this component based on its 45 V reverse voltage rating and 200 A average forward current capacity. Consider the 0.45 °C/W thermal resistance for heat sink design and the 1500 A surge current rating for transient protection needs. Verify compatibility with the twin tower mounting style and ensure the operating temperature range meets system requirements.

Diode Arrays Part Context

This component belongs to the MBR200 series of silicon power Schottky diodes. The series includes variants with different voltage ratings up to 100 V while maintaining similar current capabilities. These modules are designed for high-efficiency power conversion applications requiring low forward voltage and high reliability in demanding thermal environments.