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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 4TQFN
- Series:-
- Mfr:Microchip Technology
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:High-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:2.7V ~ 9V
- Logic Voltage - VIL, VIH:0.8V, 3V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-UDFN Exposed Pad, 4-TMLF®
- Supplier Device Package:4-TQFN (1.2x1.2)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MIC5019YFT-TR is a high-side single non-inverting MOSFET gate driver manufactured by Microchip Technology. It operates within a supply voltage range of 2.7 V to 9 V and supports both low-side and high-side configurations. The device features an ultra-small 4-pin QFN package measuring 1.2 x 1.2 mm. Key electrical parameters include a shutdown supply current of less than 1 μA, a typical DC supply current of 0.15 mA, and an output current capability of 10.6 μA. It functions reliably across an operating temperature range from -40°C to +125°C.
Feature Summary
- Ultra-small footprint utilizing a 4-pin QFN package for space-constrained designs
- Configurable for both high-side and low-side MOSFET driving applications
- Low power consumption with shutdown supply current below 1 μA
Applications
- Battery-powered portable electronic devices requiring minimal quiescent current
- High-side switching control in automotive systems
- Industrial equipment with strict size limitations
Procurement Notes
Verify the specific suffix TR indicates tape and reel packaging when ordering. Confirm the 4-pin QFN physical dimensions match your PCB layout requirements. Ensure the 2.7 V to 9 V supply range aligns with your system's voltage rails. Check that the non-inverting logic configuration meets your control signal interface needs before finalizing procurement.
Selection Notes
Select this component when a compact solution for high-side MOSFET driving is required. It is suitable for applications where low standby current is critical for battery life. Consider the 4-pin limitation if multiple drivers are needed, as it provides only one channel. Verify compatibility with the target MOSFET gate charge requirements against the 10.6 μA output specification.
Part Context
This part belongs to Microchip's family of ultra-small high-side MOSFET drivers. It is designed to replace larger discrete solutions or bulkier driver ICs in modern electronics. The QFN-4 form factor distinguishes it from standard SOIC or DIP packaged drivers, offering a significant reduction in board area usage for power management circuits.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip technical support for direct pin-compatible alternatives or functional equivalents within the same product family.
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