MMDB45-B11

RF Diode Overview

The MMDB45-B11 is a silicon step recovery diode from the MMDx & SMMDx series, featuring a beam lead construction. It provides a minimum breakdown voltage of 25 V and a junction capacitance range of 0.11 pF to 0.20 pF. The device exhibits a carrier lifetime between 3 ns and 8 ns, with typical transition times of 45 ps (maximum 58 ps). The frequency cutoff is typically 410 GHz. Thermal resistance from junction to case is specified at 600 °C/W. Maximum ratings include a forward current of 50 mA for beam lead configurations and an operating temperature range from -65°C to +175°C.

RF Diode Feature Summary

• Features fully passivated true mesa construction for sharp transitions and improved stability.
• Beam lead design delivers industry-fast transition times suitable for millimeter wave multiplication.
• Capable of generating output combs extending beyond 40 GHz.
• Screening per MIL-PRF-19500 and MIL-PRF-38534 standards is available.

RF Diode Applications

• Millimeter wave frequency multiplication
• Picosecond pulse forming circuits
• High-order multipliers such as comb generators

RF Diode Procurement Notes

Verify specific ordering suffixes against official MACOM documentation to confirm package type and screening levels. Confirm that the requested variant matches the required thermal and electrical specifications for your application. Ensure compliance with environmental directives if applicable. Contact authorized distributors or the manufacturer directly for current availability and detailed procurement requirements.

RF Diode Selection Notes

Select this component based on its low junction capacitance and fast transition time characteristics. The 25 V breakdown voltage suits moderate power applications. Consider the 600 °C/W thermal resistance when designing heat dissipation paths. Verify that the beam lead mounting method aligns with your PCB assembly capabilities and bonding temperature limits.

RF Diode Part Context

This part belongs to the MMDx & SMMDx series of silicon step recovery diodes manufactured by MACOM Technology Solutions. The series includes chip, beam lead, ceramic packaged, glass packaged, and plastic packaged options. The MMDB45-B11 specifically utilizes the beam lead configuration within this broader product family designed for high-frequency signal processing.

RF Diode Replacement Considerations

Consult the official datasheet for electrically compatible alternatives within the same series. Potential substitutes include other beam lead models like MMDB30-B11 or MMDB35-B11, provided their breakdown voltages and capacitance ranges meet circuit requirements. Verify parameter compatibility before substitution.

RF Diode FAQ

What is the maximum forward current rating for the MMDB45-B11?

The maximum forward current rating for the beam lead configuration of the MMDB45-B11 is 50 mA.

How is the transition time tested for this beam lead diode?

The transition time for beam lead devices is tested under conditions of IF = 3 mA and VR = 7 V.

What is the typical frequency cutoff for the MMDB45-B11?

The typical frequency cutoff (FCO) for the MMDB45-B11 is 410 GHz.