RF Diode MSAT-P25 product image

MSAT-P25

$9.08
  • Description:RF DIODE PIN 200V 2012
  • Series:-

SKU:1bf4dfd01d9c Category: Brand:

  
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MSAT-P25 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 200V 2012. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MSAT-P25

  • Description:RF DIODE PIN 200V 2012
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):200V
  • Current - Max:200 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:3kOhm @ 10µA, 500MHz
  • Power Dissipation (Max):-
  • Operating Temperature:175°C (TJ)
  • Package / Case:0805 (2012 Metric)
  • Supplier Device Package:2012
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MSAT-P25

MSAT-P25

RF Diode Overview

The MSAT-P25 is a broadband, high linearity medium power shunt PIN diode attenuator element manufactured by MACOM Technology Solutions. Housed in a compact 1.9 x 1.1 mm DFN package, this component operates effectively across the 0.1 to 10 GHz frequency range. It delivers low insertion loss and provides up to 27 dB of attenuation. The device features low distortion harmonics at 85 dBc and supports a forward current of 200 mA with a reverse voltage rating of 200 V. Designed for robust performance, it maintains a junction temperature capability of +175°C and complies with RoHS standards.

RF Diode Feature Summary

  • Broadband operation exceeding 10 GHz with high linearity characteristics
  • Low distortion harmonics ensuring signal integrity at 85 dBc
  • Compact surface mount DFN package design for space-constrained applications

RF Diode Applications

  • Wireless telecommunication infrastructure systems
  • Test and measurement instrumentation equipment
  • RF switching and attenuation circuits operating between 0.1 and 10 GHz

RF Diode Procurement Notes

Verify the specific datasheet revision, currently Rev. V2, against your design requirements. Confirm that the 1.9 x 1.1 mm DFN footprint matches your PCB layout constraints. Ensure thermal management strategies align with the specified thermal resistance and soldering temperature limits during assembly.

RF Diode Selection Notes

Select this component when high linearity and low harmonic distortion are critical for RF signal paths. The medium power handling and broadband nature make it suitable for general-purpose attenuation tasks. Evaluate the trade-off between the compact DFN form factor and the required thermal dissipation capabilities for your specific enclosure environment.

RF Diode Part Context

This part belongs to MACOM's portfolio of PIN diode attenuator elements designed for RF and microwave applications. It utilizes silicon technology optimized for shunt configurations in broadband circuits. The product line focuses on providing reliable switching and attenuation solutions for modern communication infrastructure requiring high performance in small packages.

RF Diode Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative components from other manufacturers.

MSAT-P25MSAT-P25
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