MSR820AJE288-10

Memory IC Overview

The MSR820AJE288-10 is a synchronous dynamic random-access memory (SDRAM) component manufactured by MoSys, Inc. It features a 576 Mbit capacity organized as 32M x 18 bits. The device utilizes a 288-pin Flip Chip Ball Grid Array (FCBGA) package with a 19x19 mm footprint. It operates at a clock frequency of 300 MHz and supports a data transfer rate of 600 MT/s. The memory interface is parallel, and the component is designed for high-performance embedded applications requiring fast data access.

Memory IC Feature Summary

• High-speed parallel memory interface supporting 600 MT/s data rates
• Integrated Synchronous Dynamic Random Access Memory (SDRAM) architecture
• Compact 288-pin FCBGA packaging for dense board layouts
• Optimized for low-latency data retrieval in embedded systems

Memory IC Applications

• High-performance networking equipment
• Industrial automation controllers
• Medical imaging devices
• Telecommunications infrastructure

Memory IC Procurement Notes

Verify the specific suffix JE288-10 to confirm pinout and speed grade compatibility. Ensure the procurement source provides original manufacturer documentation or authorized distributor certification. Check for RoHS compliance status if required by your manufacturing standards. Confirm the package type matches your PCB design constraints before finalizing orders.

Memory IC Selection Notes

Select this component when system requirements demand high bandwidth and low latency within a compact form factor. The 288-pin FCBGA package is suitable for applications with strict space limitations. Consider the 300 MHz operating frequency against your system's clock distribution capabilities. Evaluate thermal management needs due to the high-density packaging and active power consumption during operation.

Memory IC Part Context

MoSys, Inc. specializes in embedded DRAM solutions that integrate logic and memory on a single die. The MSR820 series represents their high-performance memory products designed to overcome traditional memory bottlenecks. This specific model is part of their portfolio aimed at enhancing processing efficiency in demanding electronic environments.

Memory IC Replacement Considerations

Direct replacements are limited due to the proprietary nature of MoSys embedded DRAM technology. Verify electrical compatibility and pin-to-pin equivalence with alternative SRAM or DDR solutions if cross-referencing. Consult MoSys technical support for validated substitute part numbers or updated generation equivalents.