MT47H128M8JN-25E:H

Memory IC Overview

The MT47H128M8JN-25E:H is a 1Gb (16 Meg x 8) DDR2 SDRAM manufactured by Micron Technology. It operates with VDD and VDDQ at +1.8V ±0.1V and features JEDEC-standard 1.8V I/O compatible with SSTL_18. The device utilizes a 4n-bit prefetch architecture and includes a DLL to align DQ and DQS transitions with the clock signal CK. It supports differential data strobes (DQS, DQS#) and offers an optional duplicate output strobe (RDQS). Key electrical parameters include programmable CAS latency (CL), posted CAS additive latency (AL), and selectable burst lengths of 4 or 8.

Memory IC Feature Summary

• Supports 8 internal banks for concurrent operation
• Includes on-die termination (ODT) capability
• Features adjustable data-output drive strength
• Complies with RoHS standards and supports JEDEC clock jitter specifications

Memory IC Applications

• General-purpose high-speed memory systems
• Embedded applications requiring DDR2 SDRAM
• Industrial equipment utilizing industrial temperature options

Memory IC Procurement Notes

Verify the specific suffix 'H' against official Micron documentation to confirm package type and revision details, as ordering suffixes define physical attributes. Ensure compatibility with system voltage requirements of 1.8V ±0.1V. Confirm that the selected variant meets the necessary thermal and operational specifications for the intended deployment environment before procurement.

Memory IC Selection Notes

Select this component when a 1Gb density with an 8-bit data width is required. The MT47H128M8 series provides flexibility through selectable burst lengths and programmable latencies. Consider the FBGA package options available for this family if space constraints are a factor. Verify that the system controller supports the required DDR2 signaling standards and timing parameters.

Memory IC Part Context

This part belongs to the Micron MT47H128M8 family of 1Gb DDR2 SDRAMs. The family includes variants with different densities and widths, such as MT47H256M4 and MT47H64M16. These components share common architectural features like the 4n-bit prefetch and 8-bank organization. The JN designation typically indicates a specific package configuration within the broader product line.

Memory IC FAQ

What is the power supply voltage requirement for the MT47H128M8JN-25E:H?

The device requires VDD and VDDQ to be powered at +1.8V ±0.1V.

Does this component support differential data strobes?

Yes, the MT47H128M8JN-25E:H supports differential data strobes (DQS, DQS#).