MT48LC8M16LFF4-8 IT:G

Memory IC Overview

The MT48LC8M16LFF4-8 IT:G is a 128Mb Mobile SDRAM manufactured by Micron Technology. It features an 8 Meg x 16 organization with four internal banks and operates at a maximum clock frequency of 125 MHz, corresponding to a cycle time of 8ns. The device utilizes a 54-ball VFBGA package measuring 8mm x 8mm. It supports a low-voltage power supply and includes Temperature-Compensated Self Refresh (TCSR) for industrial temperature ranges.

Memory IC Feature Summary

• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR) power-saving mode
• Internal pipelined operation with concurrent auto precharge
• Programmable burst lengths including full page access

Memory IC Applications

• Mobile communication devices
• Industrial embedded systems
• Portable consumer electronics

Memory IC Procurement Notes

Verify the specific ordering suffixes against official Micron documentation to confirm voltage levels, package type, and temperature grade. Ensure compatibility with system timing requirements before procurement. Confirm RoHS compliance status as indicated in the datasheet specifications.

Memory IC Selection Notes

Select this component for applications requiring mobile SDRAM with industrial temperature stability. Consider the 54-ball VFBGA footprint for space-constrained designs. Evaluate TCSR benefits for battery-powered systems where self-refresh current optimization is critical.

Memory IC Part Context

This part belongs to the Micron 128Mb Mobile SDRAM family, which also includes x32 configurations and automotive temperature variants. The 'LC' designation indicates a 3.3V power supply, while 'IT' specifies the industrial operating temperature range. The 'F4' suffix denotes the 54-ball VFBGA package format.

Memory IC Replacement Considerations

Compatible substitutes within the same family include MT48LC8M16LFF4-75 IT:G for higher speed or MT48LC8M16LFF4-10 IT:G for slower timing requirements. Verify pinout and electrical characteristics match before substitution.