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Product Detailed Parameters
- Description:IC GATE DRVR HI SPEED QFN
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR)
- Driven Configuration:-
- Channel Type:-
- Number of Drivers:-
- Gate Type:-
- Voltage - Supply:-
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):-
- Input Type:-
- Rise / Fall Time (Typ):-
- Operating Temperature:-
- Mounting Type:-
- Package / Case:-
- Supplier Device Package:-
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The NCP81072MNTXG is a high-speed dual MOSFET gate driver manufactured by onsemi. It features two independent low-side drivers designed for efficient switching control in power conversion applications. The device operates within a supply voltage range of 4.5 V to 20 V and supports output currents up to 5 A per channel. It utilizes a WFDN-8 surface-mount package suitable for automated assembly. The component functions reliably across an extended temperature range from -40°C to +140°C, ensuring stability in demanding thermal environments.
Feature Summary
- Dual low-side configuration providing independent control for two external MOSFETs
- High-speed switching capability with fast rise and fall times for reduced transition losses
- Robust operating voltage range supporting various logic and power supply levels
- Compact surface-mount packaging optimized for space-constrained board layouts
Applications
- DC-DC converter circuits requiring synchronous rectification
- Motor drive systems utilizing low-side switching topologies
- Industrial power supplies needing isolated or non-isolated gate control
- Battery management systems managing power stage transitions
Procurement Notes
Verify the specific suffix MNTXG against the manufacturer's current datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with your PCB footprint design for the WFDN-8 package. Cross-reference lead times and lifecycle status directly with authorized distributors as availability fluctuates. Confirm RoHS compliance documentation matches your regulatory requirements before finalizing orders.
Selection Notes
Select this component when designing circuits that require precise control of two low-side switches without integrated high-side drivers. Consider the 5 A peak drive current capability relative to the gate charge of your target MOSFETs. Evaluate the thermal performance within the WFDN-8 package against your system's heat dissipation constraints. Verify that the input logic levels align with your controller outputs to ensure reliable switching thresholds.
Part Context
This part belongs to the NCP8107x series of gate drivers from onsemi, focusing on high-performance switching applications. It complements other devices in the family by offering dedicated low-side driving solutions. The series is engineered for efficiency and reliability in modern power electronics, addressing the need for compact, high-density power stages in consumer and industrial equipment.
FAQ
Is the NCP81072MNTXG capable of driving high-side MOSFETs?
No, this device is specifically designed as a dual low-side gate driver and does not include bootstrap or high-side drive circuitry.
What is the maximum operating supply voltage for this driver?
The maximum recommended supply voltage for the NCP81072MNTXG is 20 V.
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