NSS1C200LT1G

Single Bipolar Transistors Overview

The NSS1C200LT1G is a PNP bipolar junction transistor manufactured by onsemi, designed for low saturation voltage applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current of 2A. The device is housed in an SOT-23-3 surface-mount package. Key electrical characteristics include a DC current gain (hFE) of at least 220 at 500mA and 2V, and a transition frequency (fT) of 100MHz. The collector-emitter saturation voltage is specified at 170mV under standard test conditions.

Single Bipolar Transistors Feature Summary

• Low VCE(sat) design optimized for efficient switching performance
• High DC current gain capability for effective signal amplification
• Robust 100V collector-emitter voltage rating for medium-voltage circuits

Single Bipolar Transistors Applications

• General-purpose switching circuits requiring low saturation loss
• Driver stages for loads operating within the 100V limit
• Amplifier configurations utilizing high current gain characteristics

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to ensure the correct tape-and-reel packaging configuration matches your assembly requirements. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications and environmental declarations.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 100V breakdown voltage and 2A current capacity is required in a compact SOT-23 form factor. Consider the low saturation voltage specification for applications prioritizing power efficiency during conduction states. Ensure thermal management strategies account for the package's power dissipation limits under continuous operation.

Single Bipolar Transistors Part Context

This part belongs to onsemi's NSS series of low saturation voltage transistors. These devices are engineered to minimize power loss in switching applications compared to standard general-purpose BJTs. The series offers a balance of high voltage handling and efficient current control suitable for modern compact electronic designs.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements may differ in saturation voltage or current gain specifications.