RF Amplifiers NT1189GDAE3S product image

NT1189GDAE3S

$2.91
  • Description:IC AMP CELLULAR 3.3GHZ-5GHZ 6DFN
  • Series:-
  • Mfr:Nisshinbo Micro Devices Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d5147344633a Category: Brand:

  
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NT1189GDAE3S is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Nisshinbo Micro Devices Inc.. Its product description is IC AMP CELLULAR 3.3GHZ-5GHZ 6DFN. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for NT1189GDAE3S

  • Description:IC AMP CELLULAR 3.3GHZ-5GHZ 6DFN
  • Series:-
  • Mfr:Nisshinbo Micro Devices Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Frequency:3.3GHz ~ 5GHz
  • P1dB:19dBm
  • Gain:26dB
  • Noise Figure:0.63dB
  • RF Type:Cellular, LNA
  • Voltage - Supply:3.3V ~ 5.5V
  • Current - Supply:50mA
  • Test Frequency:4.4GHz, 4.7GHz, 5GHz
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:6-DFN (1.6x1.6)
  • Grade:-
  • Qualification:-

RF Amplifiers datasheet and documents for NT1189GDAE3S

NT1189GDAE3S

RF Amplifiers Overview

The NT1189GDAE3S is a high linearity low noise amplifier (LNA) designed for the 3.3 GHz to 5.0 GHz frequency range, specifically targeting 5G Sub-6 GHz base station applications. It operates on a supply voltage of 3.3 V to 5.5 V with a typical current consumption of 50 mA. The device provides a typical gain of 26 dB for n77/n78 bands and 21 dB for n79, with a noise figure as low as 0.48 dB. It features an output P1dB of +19 dBm and an OIP3 of +37 dBm. Packaged in a compact DFN1616-6-GD footprint measuring 1.6 mm x 1.6 mm x 0.397 mm, it supports external matching circuit modifications for specific band requirements.

RF Amplifiers Feature Summary

  • High linearity performance with +37 dBm OIP3 for robust signal integrity
  • Ultra-low noise figure down to 0.48 dB for enhanced sensitivity
  • Integrated standby function to reduce power consumption
  • Compact DFN1616-6-GD package for minimal PCB area usage

RF Amplifiers Applications

  • 5G macro base stations
  • 5G small cell base stations
  • CPE local 5G distributed antenna systems (DAS)

RF Amplifiers Procurement Notes

Verify component authenticity through authorized Nisshinbo Micro Devices channels or certified distributors. Confirm RoHS compliance and halogen-free status prior to integration. Ensure ESD protection protocols are followed during handling due to sensitive RF characteristics. Cross-reference datasheet specifications against final design requirements to validate electrical performance under actual operating conditions.

RF Amplifiers Selection Notes

Select this LNA for Sub-6 GHz 5G infrastructure requiring high linearity and low noise. Suitable for designs needing configurable gain via external matching for n77, n78, or n79 bands. Ideal for space-constrained base station and DAS modules where compact DFN packaging and standby functionality are critical for thermal and power management.

RF Amplifiers Part Context

Part of the NT1189 series from Nisshinbo Micro Devices, optimized for cellular RF front-end applications. Designed to meet stringent 5G performance metrics while maintaining a small form factor. Complements other RF components in base station transceiver chains to ensure signal fidelity across Sub-6 GHz spectrum allocations.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available in official documentation.

NT1189GDAE3SNT1189GDAE3S
$2.91
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