Single FETs, MOSFETs NTD4909NAT4H product image

NTD4909NAT4H

$0.21
  • Description:NFET DPAK 30V 41A 8MO
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:cc732cc5ee81 Category: Brand:

  
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NTD4909NAT4H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is NFET DPAK 30V 41A 8MO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD4909NAT4H

  • Description:NFET DPAK 30V 41A 8MO
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for NTD4909NAT4H

NTD4909NAT4H

Single FETs, MOSFETs Overview

The NTD4909NAT4H is a single N-channel Power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 41 A at 25 °C. The device utilizes the EliteSiC technology platform, offering a typical on-resistance (RDS(on)) of 8 mΩ at VGS = 10 V. It is housed in a DPAK surface-mount package designed for high-current applications requiring low conduction losses.

Single FETs, MOSFETs Feature Summary

  • Utilizes EliteSiC technology to achieve low on-resistance and enhanced thermal performance
  • Designed for high-efficiency power switching with fast switching characteristics
  • Robust avalanche rating capability for reliable operation in inductive load scenarios

Single FETs, MOSFETs Applications

  • AC-DC Power Supplies
  • Synchronous Rectification for ATX Server and Telecom PSUs
  • Motor Drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and material composition declarations prior to integration. Cross-reference pinout configurations with the manufacturer's documentation to prevent assembly errors during PCB layout and manufacturing processes.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 30 V operation with high current handling capabilities up to 41 A. Evaluate thermal management requirements based on the DPAK package dissipation limits. Consider the low RDS(on) value for minimizing conduction losses in synchronous rectification topologies where efficiency is critical.

Single FETs, MOSFETs Part Context

This part belongs to onsemi’s portfolio of discrete power semiconductors, specifically within the single FETs and MOSFETs category. It represents the company’s focus on high-efficiency power solutions using advanced silicon carbide technologies for industrial and computing applications.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify electrical parameters such as VDS, ID, and RDS(on) match the original design requirements before considering any cross-reference parts.

NTD4909NAT4HNTD4909NAT4H
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