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NTD4909NAT4H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is NFET DPAK 30V 41A 8MO. Review the specifications below when checking this part for your BOM.
The NTD4909NAT4H is a single N-channel Power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 41 A at 25 °C. The device utilizes the EliteSiC technology platform, offering a typical on-resistance (RDS(on)) of 8 mΩ at VGS = 10 V. It is housed in a DPAK surface-mount package designed for high-current applications requiring low conduction losses.
Verify the specific ordering suffix against official datasheets to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and material composition declarations prior to integration. Cross-reference pinout configurations with the manufacturer's documentation to prevent assembly errors during PCB layout and manufacturing processes.
Select this component for designs requiring 30 V operation with high current handling capabilities up to 41 A. Evaluate thermal management requirements based on the DPAK package dissipation limits. Consider the low RDS(on) value for minimizing conduction losses in synchronous rectification topologies where efficiency is critical.
This part belongs to onsemi’s portfolio of discrete power semiconductors, specifically within the single FETs and MOSFETs category. It represents the company’s focus on high-efficiency power solutions using advanced silicon carbide technologies for industrial and computing applications.
Consult official substitution guides for compatible alternatives. Verify electrical parameters such as VDS, ID, and RDS(on) match the original design requirements before considering any cross-reference parts.
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