NTR1P02T1

Single FETs, MOSFETs Overview

The NTR1P02T1G is a P-Channel Power MOSFET manufactured by onsemi, designed for surface-mount applications in the SOT-23-3 (TO-236) package. It features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 1 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 180 mΩ at Vgs = 10 V and Id = 1.5 A. Key electrical characteristics include a gate charge (Qg) of 2.5 nC at Vgs = 5 V and an input capacitance (Ciss) of 165 pF at Vds = 5 V. The component supports a maximum power dissipation of 400 mW and operates within a junction temperature range of -55°C to +150°C. It is qualified under the AEC-Q101 standard for automotive reliability.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive-grade reliability standards
• Low gate charge enabling efficient switching performance
• Enhancement mode operation with low threshold voltage
• Compact SOT-23-3 surface-mount packaging

Single FETs, MOSFETs Applications

• Automotive electronic control units
• Power management circuits
• Load switching applications
• Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number includes the suffix 'G' for lead-free compliance and RoHS adherence. Confirm the specific ordering suffix matches the required tape-and-reel quantity or cut-tape format. Ensure the procurement source provides valid traceability documentation for automotive-grade components. Cross-reference the manufacturer's latest datasheet revision to confirm pinout and thermal specifications remain unchanged.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-channel switch with 20 V breakdown capability. The low gate charge makes it suitable for high-frequency driving applications where minimal driver current is available. Verify that the 1 A continuous current rating meets the load requirements under expected thermal conditions. Consider the Rds(on) value at the specific operating gate voltage to ensure acceptable conduction losses.

Single FETs, MOSFETs Part Context

This device belongs to the NTR1P02L series of P-Channel MOSFETs from onsemi. It shares similar electrical characteristics with the NTR1P02LT1H but may differ in packaging or manufacturing lot specifications. The series is engineered for general-purpose switching in consumer and automotive electronics. It complements other low-voltage discrete semiconductors in the manufacturer's portfolio for integrated power solutions.

Single FETs, MOSFETs Replacement Considerations

The NTR1P02T1G is functionally equivalent to the NTR1P02LT1H and NVR1P02T1G. Verify pin compatibility and thermal resistance values when substituting these parts. Ensure the replacement maintains the same AEC-Q101 qualification status if used in automotive assemblies.