PBHV9540XX

Single Bipolar Transistors Overview

The PBHV9540XX is a PNP high-voltage low VCEsat transistor manufactured by Nexperia USA Inc. It operates in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device plastic package. The device features a collector-emitter voltage of -400 V, a continuous collector current of -0.5 A, and a peak collector current of -1 A. Key electrical characteristics include a DC current gain ranging from 140 to 450 at -20 mA, and a collector-emitter saturation resistance of up to 2000 mΩ under pulsed conditions.

Single Bipolar Transistors Feature Summary

• High voltage capability with a collector-emitter breakdown rating of -400 V
• Low collector-emitter saturation voltage for efficient switching performance
• High collector current capability supporting both continuous and peak loads
• Maintains high DC current gain at elevated collector currents

Single Bipolar Transistors Applications

• Electronic ballast for fluorescent lighting
• LED driver for LED chain module
• LCD backlighting
• High Intensity Discharge front lighting
• Hook switch for wired telecom
• Switch Mode Power Supply

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and marking codes. Confirm that the non-automotive qualified status aligns with your application requirements, as this product lacks automotive testing or qualification. Ensure design compliance with absolute maximum ratings to prevent permanent damage during operation.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling combined with low saturation losses in a compact surface-mount form factor. Consider the thermal resistance values and derating curves for proper heat dissipation on FR4 PCBs. Verify that the transition frequency and switching times meet the speed requirements of the intended switching application.

Single Bipolar Transistors Part Context

This part belongs to the BISS (Breakthrough In Small Signal) transistor family designed for high-voltage applications. It serves as the PNP complement to the NPN PBHV8540X. The device utilizes silicon technology and is housed in a standard SOT89 package, providing a balance between power handling and footprint size for various electronic control and lighting circuits.

Single Bipolar Transistors Replacement Considerations

The NPN complement is the PBHV8540X. No other direct substitute part numbers are documented in the provided datasheet.

Single Bipolar Transistors FAQ

Is the PBHV9540XX automotive qualified?

No, the product data sheet explicitly states that this specific product is not automotive qualified and has been changed to non-automotive qualification.

What is the pin configuration for the SOT89 package?

Pin 1 is the emitter, Pin 2 is the collector, and Pin 3 is the base.

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.