PJQ4444P_R2_00001

Single FETs, MOSFETs Overview

The PJQ4444P_R2_00001 is a 40V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and features a DFN3333-8L package. The device supports a continuous drain current of 70A at TC=25°C and offers an ultralow on-resistance of less than 5.5mΩ at VGS=10V, ID=20A. Key electrical parameters include a gate threshold voltage ranging from 1.0V to 2.5V, a total gate charge of 25nC, and a maximum power dissipation of 50W at TC=25°C.

Single FETs, MOSFETs Feature Summary

• Advanced Trench Process Technology for high density cell design
• Ultralow on-resistance optimized for conduction loss reduction
• Lead-free construction compliant with EU RoHS 2.0 standards
• Green molding compound meeting IEC 61249 requirements

Single FETs, MOSFETs Applications

• Automotive electronics load dump surge protection
• BLDC motor control solutions
• Brick power DC-DC converter topologies
• General purpose power supply applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix _R2_00001 against official documentation to confirm packaging details, such as the 5K pcs per 13-inch reel configuration. Ensure compliance requirements match project needs, specifically checking for Halogen-free status and RoHS 2.0 certification. Confirm thermal management capabilities align with system junction temperature limits before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and high switching performance are critical for system efficiency. The DFN3333-8L package provides excellent thermal characteristics with a junction-to-case resistance of 2.5°C/W. Consider the 40V breakdown voltage and 70A current rating to ensure adequate headroom for the intended application's peak operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the PJQ4444P series of 40V N-Channel Enhancement Mode MOSFETs. It is designed using second-generation Shielded-Gate Trench (SGT) technology to minimize RDS(on) while maximizing avalanche ruggedness. The product line targets automotive-grade and general-purpose power applications requiring high figure-of-merit performance.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance values if considering alternative manufacturers' components with similar voltage and current ratings.