RSS095N05FU6TB

$2.35

Description：MOSFET N-CH 45V 9.5A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:eeaa56899770 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

RSS095N05FU6TB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 45V 9.5A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RSS095N05FU6TB

Description：MOSFET N-CH 45V 9.5A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：45 V
Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：26.5 nC @ 5 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：1830 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for RSS095N05FU6TB

RSS095N05FU6TB

Single FETs, MOSFETs Overview

The RSS095N05FU6TB is a silicon N-channel power MOSFET manufactured by ROHM Semiconductor. It features a built-in gate-source protection diode and is housed in a small surface-mount SOP8 package. The device supports a drain-source voltage of 45V and a continuous drain current of 9.5A. Key electrical characteristics include a typical on-state resistance of 11mΩ at VGS=10V, 14mΩ at VGS=4.5V, and 15mΩ at VGS=4V. Total gate charge is typically 18.9nC, with a maximum power dissipation of 2W.

Single FETs, MOSFETs Feature Summary

Built-in ESD protection diode between gate and source terminals
Designed for low-voltage drive applications
Small footprint surface mount packaging

Single FETs, MOSFETs Applications

Power switching circuits
DC/DC converters
Inverter systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'FU6TB' against official ROHM documentation to confirm tape-and-reel specifications and manufacturing origin. Ensure the component meets the required automotive or industrial reliability standards if applicable to your design. Confirm availability status as legacy products may have limited supply chains.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 45V N-channel MOSFET with integrated gate protection. The low on-resistance at 4V and 4.5V gate voltages makes it suitable for logic-level driving. Consider the 2W power dissipation limit and thermal resistance when designing heat management solutions for the SOP8 package.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's discrete semiconductor portfolio, specifically within their N-channel MOSFET lineup. These components are engineered for general-purpose power management tasks. The SOP8 package provides a balance between thermal performance and board space efficiency for consumer and industrial electronics.