S25FS512SFABHB210

Memory IC Overview

The S25FS512SFABHB210 is a 512 Mbit NOR Flash memory IC manufactured by Infineon Technologies. It features a 24-BGA (8x6) package and supports SPI, Quad I/O, and QPI interfaces with a maximum clock frequency of 133 MHz. The device operates within a supply voltage range of 1.7 V to 2 V and has an active read current of up to 100 mA. It offers a storage organization of 64 M x 8 bits and is designed for synchronous timing. The component is rated for operation between -40°C and +85°C.

Memory IC Feature Summary

• Supports Execute-in-Place (XiP) functionality for direct code execution from the flash memory.
• Provides high endurance with 100,000 program/erase cycles and long-term data retention capabilities.

Memory IC Applications

• Embedded systems requiring direct code execution
• Industrial control applications
• Automotive electronics

Memory IC Procurement Notes

Verify the specific suffix HBH210 against official Infineon documentation to confirm package type and temperature grade. Ensure compatibility with system voltage requirements of 1.7 V to 2 V. Check for RoHS compliance status in the latest datasheet revision before integration into production designs.

Memory IC Selection Notes

Select this component when high-speed serial interface performance at 133 MHz is required alongside Execute-in-Place capabilities. Consider the 24-BGA footprint constraints and the specific 1.7 V to 2 V operating voltage range compared to other 3.0 V variants in the family.

Memory IC Part Context

This part belongs to the S25FS512S series of MirrorBit Eclipse NOR Flash memories. It shares core architecture with other S25FS512S variants but differs in package, speed, and voltage specifications. It is distinct from the older S25FL512S series which typically operates at higher voltages.

Memory IC Replacement Considerations

S25FS512SAGBHI210 is a confirmed substitute within the same series offering similar 512 Mbit capacity and 24-BGA packaging.