Memory IC S29GL512T12TFN013 product image

S29GL512T12TFN013

$8.36
  • Description:IC FLASH 512MBIT PARALLEL 56TSOP
  • Series:GL-T
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Tape & Reel (TR)

SKU:6de60d69da93 Category: Brand:

  
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S29GL512T12TFN013 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 512MBIT PARALLEL 56TSOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL512T12TFN013

  • Description:IC FLASH 512MBIT PARALLEL 56TSOP
  • Series:GL-T
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:512Mbit
  • Memory Organization:64M x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:60ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package:56-TSOP
  • Access Time:120 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for S29GL512T12TFN013

S29GL512T12TFN013

Memory IC Overview

The S29GL512T12TFN013 is a 512 Mbit Parallel NOR Flash manufactured by Infineon Technologies. It features a 64 M x 8 or 32 M x 16 organization with an asynchronous parallel interface. The device supports a supply voltage range of 2.7 V to 3.6 V and operates within an industrial temperature range of -40°C to +125°C. Key performance metrics include a maximum random access time (tACC) of 120 ns, a page access time (tPACC) of 15 ns, and a maximum active read current of 60 mA.

Memory IC Feature Summary

  • Utilizes 45-nm MirrorBit technology for high density and low power consumption.
  • Includes a 512-byte write buffer to accelerate programming operations.
  • Features internal hardware ECC for single-bit error correction during reads.
  • Supports versatile I/O with a wide voltage range from 1.65 V to VCC.

Memory IC Applications

  • Embedded applications requiring Execute-in-Place (XIP) capabilities
  • Industrial systems demanding extended temperature operation
  • Automotive electronics compliant with AEC-Q100 Grade 3 standards

Memory IC Procurement Notes

Verify the specific suffix '013' against official documentation to confirm the extended temperature grade (-40°C to +125°C). Ensure compatibility with the host system's voltage levels and timing requirements before integration. Confirm package availability and moisture sensitivity handling procedures as specified in the datasheet.

Memory IC Selection Notes

Select this component when high-density storage and fast random access are required for code execution. The extended temperature range makes it suitable for harsh environments. Consider the 512-byte buffer for improved write performance compared to standard algorithms.

Memory IC Part Context

This part belongs to the GL-T family of 3.0 V core, versatile I/O flash memories. It combines XIP speed with data storage density. The family includes 512-Mb and 1-Gb densities, offering uniform 128-KB sectors and advanced sector protection features for robust data integrity.

Memory IC Replacement Considerations

S29GL512T12TFN010

S29GL512T12TFN013S29GL512T12TFN013
$8.36
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