SCT3040KRC15

$17.75

Description：1200V, 55A, 4-PIN THD, TRENCH-ST
Series：-
Mfr：Rohm Semiconductor
Package：Tube

SKU:1a45935b84a7 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

SCT3040KRC15 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is 1200V, 55A, 4-PIN THD, TRENCH-ST. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SCT3040KRC15

Description：1200V, 55A, 4-PIN THD, TRENCH-ST
Series：-
Mfr：Rohm Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：55A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：52mOhm @ 20A, 18V
Vgs(th) (Max) @ Id：5.6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：107 nC @ 18 V
Vgs (Max)：+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1337 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：262W
Operating Temperature：175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for SCT3040KRC15

SCT3040KRC15

Single FETs, MOSFETs Overview

The SCT3040KRC15 is a third-generation N-channel Silicon Carbide (SiC) MOSFET from ROHM Semiconductor, housed in a TO-247-4L package. It features a drain-source voltage of 1200V and a typical on-state resistance of 40mΩ at 25°C. The device supports a continuous drain current of 55A at 25°C case temperature and handles up to 39A at 100°C. Total power dissipation reaches 262W with a maximum virtual junction temperature of 175°C. The recommended gate drive voltage is 0/+18V.

Single FETs, MOSFETs Feature Summary

Utilizes a trench gate structure for low on-resistance and fast switching speed.
Features separated driver source and power source pins to minimize parasitic inductance and enhance high-speed performance.
Demonstrates fast reverse recovery characteristics suitable for hard-switching applications.
Designed for easy paralleling and simple driving requirements.

Single FETs, MOSFETs Applications

Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific C15 taping code corresponds to the required reel size and tape width for automated assembly lines. Confirm that the TO-247-4L pinout strictly separates the driver source and power source terminals during PCB layout to prevent potential malfunction due to incorrect exchangeability. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and reduced conduction losses are critical compared to traditional silicon devices. The four-pin package architecture is specifically chosen to leverage fast switching capabilities by reducing common source inductance effects. Consider the 175°C maximum junction temperature rating for high-temperature environments where silicon alternatives might derate significantly.

Single FETs, MOSFETs Part Context

This part belongs to the SCT3040KR series of third-generation SiC MOSFETs. It represents an evolution in trench gate technology designed to outperform previous generations in terms of switching speed and thermal stability. The standard-grade classification indicates suitability for general industrial and commercial power electronics rather than specialized automotive or aerospace reliability standards.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same family include the SCT3040KRHR variant, which offers automotive qualification. When substituting, verify that the replacement maintains the 40mΩ typical Rds(on) and 1200V Vdss ratings to ensure circuit compatibility without redesigning the gate drive or thermal interface.