SD101A-TAP

Single Diodes Overview

The SD101A-TAP is a single silicon Schottky barrier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a DO-35 axial through-hole package and supports a maximum repetitive peak reverse voltage of 60 V. The device handles an average forward rectified current of 30 mA with a maximum forward voltage drop of 950 mV at the rated current. It exhibits a low reverse leakage current of 200 nA and can withstand a non-repetitive peak forward surge current of 2 A. The component operates within a junction temperature range of -65 °C to +125 °C.

Single Diodes Feature Summary

• Utilizes metal-on-silicon Schottky barrier technology for fast switching capabilities
• Incorporates a PN junction guard ring for enhanced protection
• Designed for general-purpose applications requiring low forward voltage drop

Single Diodes Applications

• Protection of MOS devices
• Steering, biasing, and coupling diodes for fast switching logic
• Low logic level applications

Single Diodes Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm package type and electrical ratings. Ensure the ordering code matches the required DO-35 axial configuration and 60 V rating. Confirm RoHS compliance status and manufacturing origin details directly from the supplier's certified datasheet before finalizing procurement specifications.

Single Diodes Selection Notes

Select this component when a small-signal Schottky diode with axial leaded packaging is required for low-voltage, low-current circuits. The 60 V reverse voltage rating suits applications where moderate blocking capability is needed alongside fast recovery characteristics. Consider the 30 mA continuous current limit for signal processing or protection roles rather than power rectification tasks.

Single Diodes Part Context

This part belongs to the SD101 series of small-signal Schottky diodes produced by Vishay. The series is characterized by its metal-on-silicon construction and guard ring protection. These diodes are engineered for efficiency in signal handling and protection scenarios, offering a balance of speed and low conduction loss in standard discrete semiconductor form factors.

Single Diodes Replacement Considerations

Publicly confirmed substitute part numbers for this specific variant are not available in the provided source material.