SDS120J002D3-ISARH

Single Diodes Overview

The SDS120J002D3-ISARH is a third-generation Silicon Carbide Schottky Barrier Diode manufactured by Hunan Sanan Semiconductor. It features a TO-252-2L package and supports a repetitive peak reverse voltage of 1200V. The device operates with a continuous forward current of 5.4A at 135°C and exhibits a typical forward voltage of 1.35V at 2A. It offers a junction temperature range from -55°C to 175°C, ensuring stable performance across extreme thermal conditions.

Single Diodes Feature Summary

• Utilizes advanced third-generation Silicon Carbide technology for high efficiency
• Exhibits zero reverse recovery charge for fast switching capabilities
• Maintains consistent switching behavior independent of temperature variations
• Operates reliably within an extended junction temperature range

Single Diodes Applications

• Industrial uninterruptible power supplies
• Battery charging systems
• Solar inverters
• Switch mode power supplies

Single Diodes Procurement Notes

Verify the manufacturer origin as Hunan Sanan Semiconductor Co., Ltd. Confirm the specific ISARH suffix indicates tape and reel packaging containing 2500 units per reel. Ensure compliance with RoHS standards and validate that the TO-252-2L package dimensions match your PCB layout requirements before finalizing procurement.

Single Diodes Selection Notes

Select this component for applications requiring high blocking voltage and minimal switching losses. The low forward voltage drop contributes to reduced system heat generation. Consider the thermal resistance characteristics when designing heatsinking solutions. Verify that the operating frequency aligns with the diode's dynamic electrical specifications for optimal circuit performance.

Single Diodes Part Context

This part belongs to the SDS120J002D3 series of Silicon Carbide Schottky Barrier Diodes. It represents the third generation of SiC SBD technology developed by Hunan Sanan Semiconductor. The series is designed to replace traditional silicon-based solutions in high-power electronics, offering superior thermal stability and higher operational frequencies.

Single Diodes Replacement Considerations

Direct substitutes include other 1200V SiC Schottky diodes in TO-252 packages. Verify equivalent forward voltage and reverse leakage current ratings. Ensure the replacement device supports similar surge current capabilities and matches the recommended solder pad layout for reliable surface-mount assembly.