Single FETs, MOSFETs SI1473DH-T1-GE3 product image

SI1473DH-T1-GE3

$0.52
  • Description:MOSFET P-CH 30V 2.7A SC70-6
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:3b78ef771972 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

SI1473DH-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 2.7A SC70-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI1473DH-T1-GE3

  • Description:MOSFET P-CH 30V 2.7A SC70-6
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:365 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta), 2.78W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-70-6
  • Package / Case:6-TSSOP, SC-88, SOT-363

Single FETs, MOSFETs datasheet and documents for SI1473DH-T1-GE3

SI1473DH-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI1473DH-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology, housed in an SC-70 (SOT-363) package. It features a drain-source voltage of -30 V and a continuous drain current of -2.7 A at 25 °C case temperature. The on-state resistance is 0.100 Ω at VGS = -10 V and 0.145 Ω at VGS = -4.5 V. Total gate charge is typically 4.1 nC. Operating junction and storage temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Utilizes TrenchFET power MOSFET technology for optimized performance
  • Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definition
  • Features a copper leadframe within the SC-70 package for enhanced thermal conductivity

Single FETs, MOSFETs Applications

  • Load switching for portable devices

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision E (Document Number: 74438) matches the specific batch requirements. Ensure ordering suffixes align with halogen-free and lead-free specifications as indicated by the GE3 designation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact single-channel P-channel switch. Evaluate thermal derating curves against expected ambient temperatures. Verify that the required gate drive voltage meets the specified thresholds for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix SC-70 family of single-channel MOSFETs. It utilizes a copper leadframe design to improve thermal dissipation compared to traditional Alloy 42 versions. The part is designed for surface mount assembly on FR4 boards.

Single FETs, MOSFETs Replacement Considerations

Mouser lists SI1442DH-T1-GE3 as a recommended alternative. Verify pinout compatibility and electrical parameters before substitution.

SI1473DH-T1-GE3SI1473DH-T1-GE3
$0.52
Buy Now

Recent News