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SI7447ADP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 35A PPAK 1212-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI7447ADP-T1-E3
- Description：MOSFET P-CH 30V 35A PPAK 1212-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4650 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：5.4W (Ta), 83.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® 1212-8
- Package / Case：PowerPAK® 1212-8
Single FETs, MOSFETs datasheet and documents for SI7447ADP-T1-E3
Single FETs, MOSFETs Overview
The SI7447ADP-T1-E3 is a single P-Channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-SO-8 surface-mount package. The device operates with a silicon die and supports SMD/SMT installation. Key electrical parameters include a drain-source voltage of -30V, a gate-source voltage range of -20V to +20V, and a continuous drain current of 16A. The on-resistance is specified at 15 milliohms. Thermal performance allows for a power dissipation of 5.3W, with an operating temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Employs TrenchFET technology for enhanced switching efficiency and low conduction losses.
- Designed for high-current applications within a compact surface-mount footprint.
- Features robust thermal characteristics suitable for demanding power management environments.
Single FETs, MOSFETs Applications
- Power distribution circuits
- Load switches
- High-side switching applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized channels due to the prevalence of counterfeit electronic parts. Confirm RoHS compliance status via official manufacturer documentation before integration. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet. Validate pinout compatibility with existing PCB layouts during the design phase. Maintain traceability records for quality assurance purposes throughout the supply chain.
Single FETs, MOSFETs Selection Notes
Evaluate the specific requirements of the target circuit against the device's absolute maximum ratings. Consider the thermal resistance characteristics when designing heat dissipation strategies. Assess the gate charge specifications for driving capability requirements in the control logic. Compare the on-resistance values with alternative components to optimize efficiency. Verify package dimensions match the intended mechanical constraints of the assembly.
Single FETs, MOSFETs Part Context
This component belongs to the SI7 series of power MOSFETs from Vishay Siliconix. The series is characterized by advanced trench gate technology aimed at reducing on-resistance and improving switching speeds. These devices are commonly used in portable electronics and industrial power systems where space and efficiency are critical factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Cross-reference pinouts and electrical specifications carefully. Ensure any replacement maintains compatibility with existing thermal and mechanical designs.
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