SIHP125N65E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHP125N65E-GE3 is a single N-channel Power MOSFET from the E Series, utilizing fourth-generation technology. It features a TO-220AB package with a drain-source voltage (VDS) of 650 V and a continuous drain current (ID) of 27 A at 25 °C case temperature. The typical on-state resistance (RDS(on)) is 0.106 Ω at VGS = 10 V and ID = 12 A. Maximum total gate charge (Qg) is 57 nC. The device supports an operating junction temperature range of -55 °C to +150 °C and includes avalanche energy rating.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series technology for low figure-of-merit Ron x Qg
• Kelvin connection integrated to reduce gate noise
• Avalanche energy rated (UIS) capability
• Low effective capacitance (Co(er)) for reduced switching losses

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge (HID) lighting
• Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's official datasheet document number 92529 and revision S24-0434-Rev. B. Confirm that the ordering suffix GE3 indicates lead-free and halogen-free compliance as specified in the product summary. Ensure the TO-220AB package matches the required footprint for your PCB design before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking up to 650 V is required alongside moderate current handling capabilities. The Kelvin source connection is advantageous for applications sensitive to gate drive noise. Consider the thermal resistance ratings and maximum power dissipation limits relative to your heatsinking strategy to ensure operation within the safe operating area.

Single FETs, MOSFETs Part Context

This part belongs to Vishay Siliconix's E Series Power MOSFET lineup, characterized by optimized switching performance. It is designed for through-hole mounting in the TO-220AB configuration. The series targets efficiency improvements in power conversion systems by balancing conduction and switching losses through advanced silicon process technology.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or contact Vishay technical support for verified substitute part numbers. Do not assume pinout compatibility with other manufacturers' devices without verifying absolute maximum ratings and thermal characteristics against the original application requirements.