SIR516DP-T1-BE3

$2.13

Description：N-CHANNEL 100 V (D-S) MOSFET 150
Series：TrenchFET® Gen V
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7e1ea2213110 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIR516DP-T1-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 100 V (D-S) MOSFET 150. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR516DP-T1-BE3

Description：N-CHANNEL 100 V (D-S) MOSFET 150
Series：TrenchFET® Gen V
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：16.8A (Ta), 63.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1920 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 71.4W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR516DP-T1-BE3

SIR516DP-T1-BE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiR516DP-T1-BE3 is a single N-Channel MOSFET utilizing TrenchFET Gen V technology. It features a 100 V drain-source voltage rating and a maximum on-resistance of 8 mΩ at VGS = 10 V. The device supports a continuous drain current of 63.7 A and includes an integrated body diode with a reverse recovery charge of 90 nC. Packaged in a leadless PowerPAK SO-8, it offers optimized switching performance for high-efficiency power conversion.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen V architecture providing very low RDS(on) x Qg figure-of-merit
Optimized tuning for the lowest RDS(on) x Qoss figure-of-merit
100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Lead-free and halogen-free compliant material categorization

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switch
DC/DC converters
OR-ing and hot swap switch
Power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix BE3 to confirm the alternate manufacturing location designation. Ensure compliance requirements match the material categorization definitions provided by the manufacturer. Confirm that the PowerPAK SO-8 package dimensions align with the recommended minimum pad layout for surface mounting.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling within a compact footprint. The low thermal resistance facilitates efficient heat dissipation. Evaluate the gate charge specifications against driver capabilities to ensure optimal switching speeds. Consider the avalanche energy rating if operating in inductive load environments.

Single FETs, MOSFETs Part Context

This part belongs to the SiR series of N-Channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SO-8 package, which provides enhanced thermal performance compared to standard SO-8 packages. The product line emphasizes low on-resistance and fast switching characteristics suitable for modern power management designs.