SQJQ184E-T1_GE3

$3.32

Description：AUTOMOTIVE N-CHANNEL 80 V (D-S)
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c5cb7aab7ba0 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQJQ184E-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is AUTOMOTIVE N-CHANNEL 80 V (D-S). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQJQ184E-T1_GE3

Description：AUTOMOTIVE N-CHANNEL 80 V (D-S)
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：430A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：272 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：16010 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：600W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 8 x 8
Package / Case：PowerPAK® 8 x 8

Single FETs, MOSFETs datasheet and documents for SQJQ184E-T1_GE3

SQJQ184E-T1_GE3

Single FETs, MOSFETs Overview

The SQJQ184E-T1_GE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a drain-source voltage of 80 V and a continuous drain current of 430 A at 25 °C case temperature. The device achieves a maximum on-resistance of 1.4 mΩ at VGS = 10 V. Packaged in a PowerPAK 8 x 8L surface-mount configuration, it supports junction temperatures up to 175 °C and includes single pulse avalanche energy ratings.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET Gen IV power MOSFET architecture
100% Rg and UIS tested for enhanced robustness

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-current motor control applications
Low-side switching in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (S22-0703-Rev. B) and document number (77102) when sourcing components. Confirm that the package matches the PowerPAK 8 x 8L outline dimensions. Ensure compatibility with the specified soldering profile and thermal management requirements for high-current operation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling within an 80 V system. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient conditions. Consider the gate charge specifications for driver capability and switching speed requirements in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to Vishay Siliconix's automotive MOSFET portfolio. It utilizes the PowerPAK 8 x 8L package designed for high-power density. The device is manufactured using silicon technology and is intended for use in environments demanding high reliability and thermal performance.