Single FETs, MOSFETs SQJQ466E-T1_GE3 product image

SQJQ466E-T1_GE3

$2.69
  • Description:MOSFET N-CH 60V 200A PPAK 8 X 8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:8ae691b200b9 Category: Brand:

  
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SQJQ466E-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 200A PPAK 8 X 8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQJQ466E-T1_GE3

  • Description:MOSFET N-CH 60V 200A PPAK 8 X 8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:10210 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):150W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® 8 x 8
  • Package / Case:PowerPAK® 8 x 8

Single FETs, MOSFETs datasheet and documents for SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

Single FETs, MOSFETs Overview

The SQJQ466E-T1_GE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and a continuous drain current of 200 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 1.9 mΩ at VGS = 10 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a PowerPAK 8 x 8L leadless package with a height of 1.9 mm.

Single FETs, MOSFETs Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture
  • 100% Rg and UIS tested for quality assurance

Single FETs, MOSFETs Applications

  • Automotive electronic systems requiring high current switching
  • Power distribution circuits operating up to 175 °C
  • Low-side switching applications in vehicle environments

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Vishay datasheet document number 75138 to confirm specifications. Ensure the ordering suffix matches the required variant. Confirm compliance with RoHS directives and material categorization requirements as defined by the manufacturer before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding high current handling capabilities within a compact footprint. Consider the thermal resistance characteristics and the specific gate charge requirements for driving circuitry. Validate that the operating conditions align with the absolute maximum ratings provided in the technical documentation.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix family of automotive N-channel MOSFETs. It utilizes the PowerPAK 8 x 8L single configuration package designed for surface mount technology. The device integrates TrenchFET technology to optimize performance metrics such as on-resistance and switching speed.

Single FETs, MOSFETs Replacement Considerations

Consult the official Vishay documentation for verified substitute part numbers. Cross-reference pin configurations, electrical parameters, and package dimensions to ensure compatibility.

SQJQ466E-T1_GE3SQJQ466E-T1_GE3
$2.69
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