SSR1N60BTM

Description：MOSFET N-CH 600V 900MA DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:32ceebea30d7 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

SSR1N60BTM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 600V 900MA DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSR1N60BTM

Description：MOSFET N-CH 600V 900MA DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.7 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：215 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SSR1N60BTM

SSR1N60BTM

Single FETs, MOSFETs Overview

The SSR1N60BTM is a 600V N-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing Fairchild's planar DMOS technology. It features a maximum continuous drain current of 0.9A at 25°C and a typical static drain-source on-resistance of 9.7Ω at VGS = 10V. The device offers a low total gate charge of 5.9nTypical and a reverse transfer capacitance of 3.6pF. It supports a single pulsed avalanche energy of 50mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Planar DMOS technology designed for minimized on-state resistance and superior switching performance.
Capable of withstanding high energy pulses in both avalanche and commutation modes.
Features improved dv/dt capability and fast switching characteristics.

Single FETs, MOSFETs Applications

High efficiency switch mode power supplies
PWM motor controls
High efficient DC to DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TM' against official documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with D-PAK or I-PAK mechanical footprints as defined in the datasheet. Confirm RoHS compliance status and check for any lifecycle notices regarding obsolescence before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust avalanche ruggedness and low gate charge. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the maximum continuous drain current derating curve when designing for elevated case temperatures above 25°C.

Single FETs, MOSFETs Part Context

This part belongs to the SSR1N60B / SSU1N60B family of 600V N-Channel MOSFETs originally produced by Fairchild Semiconductor. The SSR prefix typically denotes the D-PAK package, while SSU indicates the I-PAK package. These devices are engineered for general-purpose high-voltage switching applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the SSR1N60B and SSU1N60B variants from the same manufacturer family. Verify pinout compatibility and ensure that replacement parts meet the same electrical ratings for voltage, current, and thermal performance.